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NDS9933中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

NDS9933
廠商型號(hào)

NDS9933

功能描述

Dual P-Channel Enhancement Mode Field Effect Transistor

文件大小

191.77 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-10-24 22:30:00

NDS9933規(guī)格書(shū)詳情

General Description

This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage apllications such as DC motor control and DC/DC conversion where fast switching,low in-line power loss, and resistance to transients are

needed.

Features

? -2.8 A, -20 V. RDS(on) = 0.14 ? @ VGS = -4.5 V

RDS(on) = 0.19 ? @ VGS = -2.7 V

RDS(on) = 0.20 ? @ VGS = -2.5 V.

? High density cell design for extremely low RDS(on).

? High power and current handling capability in a widely used surface mount package.

? Dual MOSFET in surface mount package.

產(chǎn)品屬性

  • 型號(hào):

    NDS9933

  • 功能描述:

    MOSFET Dual P-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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