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NE219

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTIONANDAPPLICATIONS TheNE219seriesofNPNsiliconbipolartransistorsisdesignedforsmallsignalamplifierandoscillatorapplicationsup6GHz. FEATURES ●HIGHfr:8GHz ●LOWNOISE: 1dBat0.5GHz 2.2dBat2GHz ●HIGHCOLLECTORCURRENT:80mA ●HIGHOSCILLATORPOWE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE21903

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTIONANDAPPLICATIONS TheNE219seriesofNPNsiliconbipolartransistorsisdesignedforsmallsignalamplifierandoscillatorapplicationsup6GHz. FEATURES ●HIGHfr:8GHz ●LOWNOISE: 1dBat0.5GHz 2.2dBat2GHz ●HIGHCOLLECTORCURRENT:80mA ●HIGHOSCILLATORPOWE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE21908

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTIONANDAPPLICATIONS TheNE219seriesofNPNsiliconbipolartransistorsisdesignedforsmallsignalamplifierandoscillatorapplicationsup6GHz. FEATURES ●HIGHfr:8GHz ●LOWNOISE: 1dBat0.5GHz 2.2dBat2GHz ●HIGHCOLLECTORCURRENT:80mA ●HIGHOSCILLATORPOWE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE21912

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTIONANDAPPLICATIONS TheNE219seriesofNPNsiliconbipolartransistorsisdesignedforsmallsignalamplifierandoscillatorapplicationsup6GHz. FEATURES ●HIGHfr:8GHz ●LOWNOISE: 1dBat0.5GHz 2.2dBat2GHz ●HIGHCOLLECTORCURRENT:80mA ●HIGHOSCILLATORPOWE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE21935

NPN SILICON HI FREQUNCY TRANSISTOR

DESCRIPTION: TheASINE21935isDesignedforgeneralpurposeandsmallsignalamplifierandoscillatorapplicationsupto6.0GHz. FEATURESINCLUDE: ?Highfrequency8.0GH ?Lownoise,1dBat0.5GHz.

ASI

Advanced Semiconductor

NE21935

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTIONANDAPPLICATIONS TheNE219seriesofNPNsiliconbipolartransistorsisdesignedforsmallsignalamplifierandoscillatorapplicationsup6GHz. FEATURES ●HIGHfr:8GHz ●LOWNOISE: 1dBat0.5GHz 2.2dBat2GHz ●HIGHCOLLECTORCURRENT:80mA ●HIGHOSCILLATORPOWE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE21937

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTIONANDAPPLICATIONS TheNE219seriesofNPNsiliconbipolartransistorsisdesignedforsmallsignalamplifierandoscillatorapplicationsup6GHz. FEATURES ●HIGHfr:8GHz ●LOWNOISE: 1dBat0.5GHz 2.2dBat2GHz ●HIGHCOLLECTORCURRENT:80mA ●HIGHOSCILLATORPOWE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE21987

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTIONANDAPPLICATIONS TheNE219seriesofNPNsiliconbipolartransistorsisdesignedforsmallsignalamplifierandoscillatorapplicationsup6GHz. FEATURES ●HIGHfr:8GHz ●LOWNOISE: 1dBat0.5GHz 2.2dBat2GHz ●HIGHCOLLECTORCURRENT:80mA ●HIGHOSCILLATORPOWE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NTE219

SiliconPowerTransistorAudioPowerAmp,MediumSpeedSwitch

Description: TheNTE130(NPN)andNTE219(PNP)aresiliconcomplementarytransistorsinaTO3typecasedesignedforgeneralpurposeswitchingandamplifierapplications. Features: ?DCCurrentGain:hFE=20–70@IC=4A ?Collector–EmitterSaturationVoltage:VCE(sat)=1.1V(Max

NTE

NTE Electronics

NVSA219B

rohscompliant

NICHIANichia Corporation&Subsidiaries

日亞化學(xué)工業(yè)株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    NE219

  • 制造商：

    NEC

  • 制造商全稱(chēng)：

    NEC

  • 功能描述：

    NPN SILICON HIGH FREQUENCY TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
23+
原廠封裝
8293
詢(xún)價(jià)
ASI
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢(xún)價(jià)
NEC
31
公司優(yōu)勢(shì)庫(kù)存 熱賣(mài)中!
 詢(xún)價(jià)
24+
1570
詢(xún)價(jià)
IR
24+
TO-220
35200
一級(jí)代理/放心采購(gòu)
 詢(xún)價(jià)
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
IR
21+
TO220
10000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
IR
22+
TO-220
6000
終端可免費(fèi)供樣,支持BOM配單
 詢(xún)價(jià)
IR
23+
SMD
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
 詢(xún)價(jià)
IR
24+
NA/
17138
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票
 詢(xún)價(jià)
更多NE219供應(yīng)商 更新時(shí)間2025-4-16 9:48:00

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