NE27200中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書
NE27200規(guī)格書詳情
DESCRIPTION
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.
FEATURES
? Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
? Gate Length: Lg = 0.2 μm
? Gate Width : Wg = 200 μm
產(chǎn)品屬性
- 型號:
NE27200
- 制造商:
NEC
- 制造商全稱:
NEC
- 功能描述:
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
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23+ |
NA/ |
3297 |
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1426+ |
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53 |
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23+ |
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1005 |
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24+ |
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2978 |
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2016+ |
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6000 |
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詢價 | ||
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22+ |
TSSOP |
5623 |
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詢價 | ||
CFEON |
2022 |
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80000 |
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SOP-8P |
68900 |
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詢價 | |||
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23+ |
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4500 |
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詢價 | ||
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23+ |
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7512 |
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詢價 |