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NE325S01-T1B中文資料CEL數(shù)據手冊PDF規(guī)格書
NE325S01-T1B規(guī)格書詳情
DESCRIPTION
The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications.
NECs stringent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
? SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz
? HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz
? GATE LENGTH: ≤ 0.20 μm
? GATE WIDTH: 200 μm
? LOW COST PLASTIC PACKAGE
產品屬性
- 型號:
NE325S01-T1B
- 功能描述:
射頻GaAs晶體管 Super Lo Noise HJFET
- RoHS:
否
- 制造商:
TriQuint Semiconductor
- 技術類型:
pHEMT
- 頻率:
500 MHz to 3 GHz
- 增益:
10 dB
- 噪聲系數(shù):
正向跨導
- gFS(最大值/最小值):
4 S 漏源電壓
- 閘/源擊穿電壓:
- 8 V
- 漏極連續(xù)電流:
3 A
- 最大工作溫度:
+ 150 C
- 功率耗散:
10 W
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NEC |
24+ |
SMD |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
NEC |
23+ |
cross |
8890 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 | ||
NEC |
04+ |
SO86 |
8175 |
詢價 | |||
NEC |
24+ |
SMT |
25000 |
一級專營品牌全新原裝熱賣 |
詢價 | ||
NEC |
03+ |
SMT86 |
522 |
現(xiàn)貨 |
詢價 | ||
NEC |
21+ |
cross |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
NEC |
2016+ |
SMT86 |
6528 |
只做進口原裝現(xiàn)貨!假一賠十! |
詢價 | ||
NEC |
2023+ |
SOT86 |
3685 |
全新原廠原裝產品、公司現(xiàn)貨銷售 |
詢價 | ||
NEC |
589220 |
16余年資質 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
NEC |
ROHS |
13352 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 |