零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NE521 | High-speed dual-differential comparator/sense amp FEATURES ?12nsmaximumguaranteedpropagationdelay ?20μAmaximuminputbiascurrent ?TTLcompatiblestrobesandoutputs ?Largecommon-modeinputvoltagerange ?Operatesfromstandardsupplyvoltages APPLICATIONS ?MOSmemorysenseamp ?A-to-Dconversion ?High-speedlinereceiver | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | |
NE521 | High??peed Dual??ifferential Comparator/Sense Amp | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
Transimpedance amplifier 280MHz DESCRIPTION TheNE5210isa7k?transimpedancewideband,lownoiseamplifierwithdifferentialoutputs,particularlysuitableforsignalrecoveryinfiber-opticreceivers.ThepartisideallysuitedformanyotherRFapplicationsasageneralpurposegainblock. FEATURES ?Lownoise:3.5pA/√Hz | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Transimpedance amplifier 280MHz DESCRIPTION TheNE5210isa7k?transimpedancewideband,lownoiseamplifierwithdifferentialoutputs,particularlysuitableforsignalrecoveryinfiber-opticreceivers.ThepartisideallysuitedformanyotherRFapplicationsasageneralpurposegainblock. FEATURES ?Lownoise:3.5pA/√Hz | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES ?HIGHPOWERGAIN:GA=15dBTYPatf=2GHZ,VCE=2V,IC=3mA,ZS=ZL=50? ?LOWNOISE:NF=1.0dBTYPatf=2GHZ,VCE=2V,IC=3mA,ZS=ZL=50? ?OIP3=15dBmTYPatf=2GHZ,VCE=2V,IC=3mA,ZS=ZL=50? ?4PINSUPERMINIMOLDPACKAGE ?GROUNDEDEMITT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
GaAs HETEROJUNCTION BIPOLAR TRANSISTOR LtoSBANDLOWNOISEAMPLIFIER NPNGaAsHBT FEATURES ·ForLowNoise&HighGainamplifiers NF=1.0dBTYP.Ga=15.0dBTYP.MSG=15.0dBTYP.(@f=2GHz,VCE=2V,IC=3mA,ZS=ZL=50W) OIP3=15dBmTYP.(@f=2GHz,VCE=2V,IC=3mA,ZS=ZL=50W) ·4-pinsuperminimold | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES ?HIGHPOWERGAIN:GA=15dBTYPatf=2GHZ,VCE=2V,IC=3mA,ZS=ZL=50? ?LOWNOISE:NF=1.0dBTYPatf=2GHZ,VCE=2V,IC=3mA,ZS=ZL=50? ?OIP3=15dBmTYPatf=2GHZ,VCE=2V,IC=3mA,ZS=ZL=50? ?4PINSUPERMINIMOLDPACKAGE ?GROUNDEDEMITT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
GaAs HETEROJUNCTION BIPOLAR TRANSISTOR LtoSBANDLOWNOISEAMPLIFIER NPNGaAsHBT FEATURES ·ForLowNoise&HighGainamplifiers NF=1.0dBTYP.Ga=15.0dBTYP.MSG=15.0dBTYP.(@f=2GHz,VCE=2V,IC=3mA,ZS=ZL=50W) OIP3=15dBmTYP.(@f=2GHz,VCE=2V,IC=3mA,ZS=ZL=50W) ·4-pinsuperminimold | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
High-speed dual-differential comparator/sense amp FEATURES ?12nsmaximumguaranteedpropagationdelay ?20μAmaximuminputbiascurrent ?TTLcompatiblestrobesandoutputs ?Largecommon-modeinputvoltagerange ?Operatesfromstandardsupplyvoltages APPLICATIONS ?MOSmemorysenseamp ?A-to-Dconversion ?High-speedlinereceiver | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
High-speed dual-differential comparator/sense amp FEATURES ?12nsmaximumguaranteedpropagationdelay ?20μAmaximuminputbiascurrent ?TTLcompatiblestrobesandoutputs ?Largecommon-modeinputvoltagerange ?Operatesfromstandardsupplyvoltages APPLICATIONS ?MOSmemorysenseamp ?A-to-Dconversion ?High-speedlinereceiver | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
High??peed Dual??ifferential Comparator/Sense Amp | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
High??peed Dual??ifferential Comparator/Sense Amp | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
High??peed Dual??ifferential Comparator/Sense Amp | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
High??peed Dual??ifferential Comparator/Sense Amp | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
High??peed Dual??ifferential Comparator/Sense Amp | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
High??peed Dual??ifferential Comparator/Sense Amp | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
包裝:卷帶(TR) 封裝/外殼:14-SOIC(0.154",3.90mm 寬) 類別:集成電路(IC) 比較器 描述:IC COMPARATOR DUAL DIFF 14-SOIC | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
詳細(xì)參數(shù)
- 型號(hào):
NE521
- 制造商:
PHILIPS
- 制造商全稱:
NXP Semiconductors
- 功能描述:
High-speed dual-differential comparator/sense amp
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Sig |
24+ |
DIP |
3000 |
公司存貨 |
詢價(jià) | ||
PHI |
24+ |
3.9mm |
4897 |
絕對(duì)原裝!現(xiàn)貨熱賣! |
詢價(jià) | ||
S |
2020+ |
DIP |
216 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
24+ |
SOP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | |||
PHILIPS |
6000 |
面議 |
19 |
SMD |
詢價(jià) | ||
S |
2020+ |
DIP |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
S |
80 |
DIP |
108 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
S |
DIP |
699839 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
PHILIPS |
2023+環(huán)?,F(xiàn)貨 |
SOP |
3500 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢價(jià) | ||
S |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量 |
詢價(jià) |
相關(guān)規(guī)格書
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- NE5532ADR
- NE5532AP
- NE5532APSR
- NE5532D8G
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- NE5532DG
- NE5532DR2G
- NE5532DRG4
- NE5532PE4
- NE5534AD
- NE5534ADR
- NE5534ADR2G
- NE5534AP
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- NE5550234-EV04-A
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- NE592D14G
- NE592D8G
- NE592D8R2G
- NE6510179A-T1
- NE662M04-A
- NE664M04-A
相關(guān)庫存
更多- NE521DG
- NE5230DR2G
- NE5517DG
- NE5517DR2G
- NE5532AD
- NE5532AD8G
- NE5532AD8R2G/BKN
- NE5532ADRE4
- NE5532APE4
- NE5532D
- NE5532D8G
- NE5532D8R2G/BKN
- NE5532DR
- NE5532DR2G/BKN
- NE5532P
- NE5532PSR
- NE5534ADG
- NE5534ADR2G
- NE5534ADRE4
- NE5534APE4
- NE5534DG
- NE5534DR2G
- NE5534PE4
- NE5550234-EV09-A
- NE555D
- NE555DG4
- NE555DRE4
- NE555P
- NE555PSR
- NE555PSRG4
- NE555PWE4
- NE555PWR
- NE555PWRG4
- NE556D
- NE556DR
- NE556NE4
- NE-56
- NE570DR2G
- NE5920
- NE592D14R2G
- NE592D8R2G
- NE650R479A-T1
- NE651R479A-T1
- NE662M04-T2-A
- NE664M04-T2-A