NE5500479A中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

3.5 V OPERATION SILICON RF POWER LDMOS FET

FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS

DESCRIPTION

The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate laterally diffused

MOS FET) and housed in a surface mount package. The device can deliver 31.5 dBm output power with 62 power

added efficiency at 900 MHz as AMPS final output stage amplifier under the 3.5 V supply voltage. It also can deliver

35 dBm output power with 62 power added efficiency at 4.8 V, as GSM 900 class 4 final stage amplifiers.

FEATURES

? High output power : Pout = 31.5 dBm TYP. (VDS = 3.5 V, IDset = 300 mA, f = 900 MHz, Pin = 20 dBm)

? High power added efficiency : ηadd = 62 TYP. (VDS = 3.5 V, IDset = 300 mA, f = 900 MHz, Pin = 20 dBm)

? High linear gain : GL = 15.0 dB TYP. (VDS = 3.5 V, IDset = 300 mA, f = 900 MHz, Pin = 10 dBm)

? Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.

? Single supply : VDS = 3.0 to 8.0 V