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NE6510179A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECsNE6510179AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering1.8wattsofoutputpower(C/W)at3.5Vand3Wattsofouptutpower(CW)at5

CEL

California Eastern Labs

NE6510179A

N-CHANNEL GaAs HJ-FET

1WL-BANDPOWERGaAsHJ-FET DESCRIPTION TheNE6510179Aisa1WGaAsHJ-FETdesignedformiddlepowertransmitterapplicationsformobile communicationandwirelessPCLANsystems.Itiscapableofdelivering1Wofoutputpower(CW)withhighlinear gain,highefficiencyandexcellentdist

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE6510179A-A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECsNE6510179AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering1.8wattsofoutputpower(C/W)at3.5Vand3Wattsofouptutpower(CW)at5

CEL

California Eastern Labs

NE6510179A-T1

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECsNE6510179AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering1.8wattsofoutputpower(C/W)at3.5Vand3Wattsofouptutpower(CW)at5

CEL

California Eastern Labs

NE6510179A-T1

N-CHANNEL GaAs HJ-FET

1WL-BANDPOWERGaAsHJ-FET DESCRIPTION TheNE6510179Aisa1WGaAsHJ-FETdesignedformiddlepowertransmitterapplicationsformobile communicationandwirelessPCLANsystems.Itiscapableofdelivering1Wofoutputpower(CW)withhighlinear gain,highefficiencyandexcellentdist

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE6510179A-T1-A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECsNE6510179AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering1.8wattsofoutputpower(C/W)at3.5Vand3Wattsofouptutpower(CW)at5

CEL

California Eastern Labs

NE6510179A-EVPW19

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD NE6510179A 1.9GHZ

CEL

California Eastern Labs

NE6510179A-EVPW24

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD NE6510179A 2.4GHZ

CEL

California Eastern Labs

NE6510179A-EVPW26

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD NE6510179A 2.6GHZ

CEL

California Eastern Labs

NE6510179

NECs3W,L&S-BANDMEDIUMPOWERGaAsHJ-FET

DESCRIPTION NECsNE6510179AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering1.8wattsofoutputpower(C/W)at3.5Vand3Wattsofouptutpower(CW)at5

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號：

    NE6510179A

  • 功能描述：

    射頻GaAs晶體管 L&S Band GaAs HJFET

  • RoHS：

    否

  • 制造商：

    TriQuint Semiconductor

  • 技術(shù)類型：

    pHEMT

  • 頻率：

    500 MHz to 3 GHz

  • 增益：

    10 dB

  • 噪聲系數(shù)：

    正向跨導(dǎo)

  • gFS（最大值/最小值）：

    4 S 漏源電壓

  • 閘/源擊穿電壓：

    - 8 V

  • 漏極連續(xù)電流：

    3 A

  • 最大工作溫度：

    + 150 C

  • 功率耗散：

    10 W

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
SMD
10200
新進(jìn)庫存/原裝
 詢價
原廠正品
23+
SMT
5000
原裝正品,假一罰十
 詢價
NEC
23+
NA
12000
全新原裝假一賠十
 詢價
NEC
23+
9
專做原裝正品,假一罰百!
 詢價
NEC
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
 詢價
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費送樣
 詢價
NEC
23+
TO-59
26520
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
NEC
ROHS
13352
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
NEC
23+
十字架
8293
詢價
CEL
24+
原廠原裝
4000
原裝正品
 詢價
更多NE6510179A供應(yīng)商 更新時間2025-1-26 15:30:00

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