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NE71300-N

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280μm GateLength:Lg=0.3μm

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-N

GaAs MES FET

LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71300

WihaSockets

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etc未分類制造商etc2未分類制造商

NE71300

LOWNOISELTOK-BANDGaAsMESFET

CEL

California Eastern Labs

NE71300

LOWNOISELTOK-BANDGaAsMESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300L

LOWNOISELTOK-BANDGaAsMESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-L

LtoKuBANDLOWNOISEAMPLIFIERN-CHANNELGaAsMESFET

FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280μm GateLength:Lg=0.3μm

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-L

GaAsMESFET

LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE71300M

LOWNOISELTOK-BANDGaAsMESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-M

GaAsMESFET

LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE71300-M

LtoKuBANDLOWNOISEAMPLIFIERN-CHANNELGaAsMESFET

FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280μm GateLength:Lg=0.3μm

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300N

LOWNOISELTOK-BANDGaAsMESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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NE72084-SL
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更多NE71300-N供應(yīng)商 更新時(shí)間2025-1-9 10:01:00