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NE76184A-SL中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

NE76184A-SL
廠商型號(hào)

NE76184A-SL

功能描述

GENERAL PURPOSE L TO X-BAND GaAs MESFET

文件大小

52.61 Kbytes

頁面數(shù)量

4

生產(chǎn)廠商 Renesas Electronics America
企業(yè)簡稱

NEC瑞薩

中文名稱

日本瑞薩電子株式會(huì)社官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-25 23:00:00

NE76184A-SL規(guī)格書詳情

DESCRIPTION

NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxy sealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. The NE76184AS is suitable for DBS, TVRO, GPS and other commercial applications.

? LOW NOISE FIGURE: 0.8 dB typical at 4 GHz

? HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz

? LG= 1.0 μm, WG= 400 μm

? LOW COST METAL/CERAMIC PACKAGE

? TAPE & REEL PACKAGING OPTION AVAILABLE

產(chǎn)品屬性

  • 型號(hào):

    NE76184A-SL

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    GENERAL PURPOSE L TO X-BAND GaAs MESFET

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