NE960R275中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書
NE960R275規(guī)格書詳情
DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically sealed ceramic package. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
? High Output Power : Po (1 dB) = +25.0 dBm TYP.
? High Linear Gain : 10.0 dB TYP.
? High Power Added Efficiency: 35 TYP. @VDS = 9 V, IDset = 90 mA, f = 14.5 GHz
產(chǎn)品屬性
- 型號(hào)：
NE960R275
- 功能描述：
射頻GaAs晶體管 X KU Band MESFET
- RoHS：
否
- 制造商：
TriQuint Semiconductor
- 技術(shù)類型：
pHEMT
- 頻率：
500 MHz to 3 GHz
- 增益：
10 dB
- 噪聲系數(shù)：
正向跨導(dǎo)
- gFS（最大值/最小值）：
4 S 漏源電壓
- 閘/源擊穿電壓：
- 8 V
- 漏極連續(xù)電流：
3 A
- 最大工作溫度：
+ 150 C
- 功率耗散：
10 W
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RENESAS |
23+ |
SOT-23 |
57000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
原廠正品 |
23+ |
SOT23 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
NEC |
24+ |
SOT-23 |
409 |
詢價(jià) | |||
RENESAS/瑞薩 |
22+ |
SOT-23 |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
NEC |
22+ |
SOT23 |
25000 |
只有原裝原裝,支持BOM配單 |
詢價(jià) | ||
California Eastern Labs |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
RENESAS/瑞薩 |
2021+ |
SOT23 |
100500 |
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
CEL |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費(fèi)送樣 |
詢價(jià) | ||
CEL |
24+ |
原廠原封 |
4000 |
原裝正品 |
詢價(jià) | ||
RENESAS/瑞薩 |
21+ |
SOT23 |
1855 |
詢價(jià) |
