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NES1823P-30中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

NES1823P-30
廠商型號

NES1823P-30

功能描述

30 W L-S BAND PUSH-PULL POWER GaAs MES FET

文件大小

51.62 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Renesas Electronics America
企業(yè)簡稱

NEC瑞薩

中文名稱

日本瑞薩電子株式會社官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-23 22:30:00

NES1823P-30規(guī)格書詳情

DESCRIPTION

The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The device employs 0.9 μm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

? Push-pull type N-channel GaAs MES FET

? High output power : 30 W TYP.

? High linear gain : 13 dB TYP.

? High power added efficiency : 40 TYP. @VDS = 10 V, IDset = 4 A, f = 2.2 GHz

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
WEAN WE
2020+
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6000
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19
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23+
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9365
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8510
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24+
244
現(xiàn)貨供應(yīng)
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