首頁(yè)>NESG2021M16>規(guī)格書詳情
NESG2021M16中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書
NESG2021M16規(guī)格書詳情
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
? The device is an ideal choice for low noise, high-gain at low current amplifications
NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz
? Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
? High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
? 6-pin lead-less minimold (M16, 1208 PKG)
產(chǎn)品屬性
- 型號(hào):
NESG2021M16
- 功能描述:
射頻硅鍺晶體管 RO 551-NESG2021M16-A
- RoHS:
否
- 制造商:
Infineon Technologies 發(fā)射極 - 基極電壓
- 封裝:
Reel
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
RENESAS |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
NEC |
22+ |
SOT343 |
3000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
CEL |
24+ |
原廠原封 |
4000 |
原裝正品 |
詢價(jià) | ||
NEC |
1742+ |
SOT343 |
98215 |
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品! |
詢價(jià) | ||
RENESAS/瑞薩 |
23+ |
SOT-343 |
54258 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
NEC |
20+ |
SOT343 |
49000 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
NEC |
6000 |
面議 |
19 |
DIP/SMD |
詢價(jià) | ||
NEC |
19+ |
SOT-343 |
87068 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價(jià) | ||
RENESAS |
24+ |
6-PINM |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢價(jià) | ||
RENESAS |
6-PINM |
9497 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) |