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NESG2101M16

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NPNSiGeRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(125mW)6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification PO(1dB)=21dBmTYP.@VCE=3.6

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2101M16

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(125mW) 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,highgain amplification PO(1dB)=21dBmTYP.@VCE=3.6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M16

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

NESG2101M16

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2101M16-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(125mW) 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,highgain amplification PO(1dB)=21dBmTYP.@VCE=3.6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M16-T3

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NPNSiGeRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(125mW)6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification PO(1dB)=21dBmTYP.@VCE=3.6

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2101M16-T3

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(125mW) 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,highgain amplification PO(1dB)=21dBmTYP.@VCE=3.6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M16-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(125mW) 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,highgain amplification PO(1dB)=21dBmTYP.@VCE=3.6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M16_1

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2101M16-A

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2101M16-T3

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2101M16-T3-A

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

NESG2101M16-T3-A

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào):

    NESG2101M16

  • 功能描述:

    射頻硅鍺晶體管 RO 551-NESG2101M16-A

  • RoHS:

  • 制造商:

    Infineon Technologies 發(fā)射極 - 基極電壓

  • 封裝:

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢(xún)價(jià)
CEL
17+
原廠原裝
5000
原裝正品
詢(xún)價(jià)
NEC
24+
1208
5000
全現(xiàn)原裝公司現(xiàn)貨
詢(xún)價(jià)
RENESAS
23+
SOT-343
63000
原裝正品現(xiàn)貨
詢(xún)價(jià)
NEC
2020+
1208
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
詢(xún)價(jià)
RENESAS/瑞薩
22+
1208
20000
保證原裝正品,假一陪十
詢(xún)價(jià)
NEC
22+
SMD
28600
只做原裝正品現(xiàn)貨假一賠十一級(jí)代理
詢(xún)價(jià)
NEC
23+
6-PIN
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢(xún)價(jià)
NEC
21+
6-PIN
10000
原裝現(xiàn)貨假一罰十
詢(xún)價(jià)
NEC
2022
6-PIN
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)
詢(xún)價(jià)
更多NESG2101M16供應(yīng)商 更新時(shí)間2024-10-27 15:00:00