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NESG3031M05-T1-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG3031M05-T1-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

CEL

California Eastern Labs

NESG3031M05-T1

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG3031M05-T1

NPNSILICONGERMANIUMRFTRANSISTOR

CEL

California Eastern Labs

NESG3031M05-T1

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

FEATURES ?LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz ?MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz ?SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號:

    NESG3031M05-T1-A

  • 功能描述:

    射頻硅鍺晶體管 NPN SiGe High Freq

  • RoHS:

  • 制造商:

    Infineon Technologies 發(fā)射極 - 基極電壓

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
24+
SOT343
8950
BOM配單專家,發(fā)貨快,價格低
詢價
Renesas(瑞薩)
23+
原廠封裝
32078
10年以上分銷商,原裝進(jìn)口件,服務(wù)型企業(yè)
詢價
NECT1K原裝
SOT-343
3000
原裝長期供貨!
詢價
NEC
24+
SOT-343
482
詢價
RENESAS
1742+
SOT343
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
詢價
SOT-343
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
CEL
19+
SOT-343
200000
詢價
RENESAS
20+
SOT343
49000
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
RENESAS
2020+
SOT343
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
NEC
24+
13
35200
一級代理/放心采購
詢價
更多NESG3031M05-T1-A供應(yīng)商 更新時間2025-3-12 11:04:00