NGD4300GC中文資料安世數(shù)據(jù)手冊(cè)PDF規(guī)格書
廠商型號(hào) |
NGD4300GC |
功能描述 | 4 A peak high-performance dual MOSFET gate driver |
絲印標(biāo)識(shí) | |
封裝外殼 | HWSON8 |
文件大小 |
2.54472 Mbytes |
頁面數(shù)量 |
22 頁 |
生產(chǎn)廠商 | Nexperia B.V. All rights reserved |
企業(yè)簡(jiǎn)稱 |
NEXPERIA【安世】 |
中文名稱 | 安世半導(dǎo)體(中國(guó))有限公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-1-29 17:08:00 |
NGD4300GC規(guī)格書詳情
1. General description
The NGD4300 is a high-performance gate driver
designed to drive both high-side and low-side Nchannel
MOSFETs in a synchronous buck or a halfbridge
configuration. The floating high-side driver
can work with rail voltages up to 120 V and uses a
bootstrap supply with an integrated diode. Both lowside
and high-side output drivers have an independent
undervoltage lockout (UVLO) circuit which disables
the output driver when the driver supply is below its
threshold level. The NGD4300 accepts input control
signals complying with both TTL and CMOS signaling
as low as 2.5 V (±10%). The low voltage, provided by
an internal voltage regulator, is used to supply circuitry
in signal paths controlling the low-side and high-side
power switches. This enables a low-power operation
and a better controlled driver performance irrespective
of the IC supply voltage.
Excellent delay matching of 1 ns typical is achieved for
the low-side and high-side signal paths. The 4 A peak
source and sink current capability of the driver’s output
stage guarantees short rise- and fall-times even at high
loads.
The NGD4300 is offered in the SO8, HWSON8 and
HSO8 packages, and operates over an extended
?40 °C to +125 °C temperature range.
2. Features and benefits
? Input signals complying with both TTL and CMOS
signaling of 2.5 V, 3.3 V, and 5 V
? Output signals with excellent propagation delay
matching of 1 ns typical
? Fast propagation times of 13 ns typical
? Switching frequency up to 1 MHz
? 4 A peak source and 5 A sink current capability of
the gate driver output stage
? 4 ns rise and 3.5 ns fall times with 1000 pF loads
? Bootstrap supply voltage up to 120 V using an
integrated bootstrap diode
? 8 V to 17 V VDD operation range
? Undervoltage protection for both low-side and highside
supplies
? Low-power consumption (IDDO = 0.6 mA typical)
? 8 pin SO8, HWSON8 and HSO8 packages
? ESD protection:
? HBM: ANSI/ESDA/JEDEC JS-001 class 2
exceeds 2000 V
? CDM: ANSI/ESDA/JEDEC JS-002 class C3
exceeds 1000 V
? Specified from -40 °C to +125 °C
3. Applications
? Current-fed, push-pull converters
? Two-switch forward power converters
? Class-D audio amplifiers
? Solid-state motor drives
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6000 |
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