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NJ4N60D-LI

4.0A 600V N-CHANNEL POWER MOSFET

FEATURES *VDS=600V *ID=4.0A *RDS(ON)=2.Ω@VGS=10V. *UltraLowgatecharge(typical15nC) *Lowreversetransfercapacitance(CRSS=typical8.0pF) *Fastswitchingcapability *Avalancheenergyspecified *Improveddv/dtcapability,highruggedness

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ4N60D-LI

4.0A 600V N-CHANNEL POWER MOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ4N60D-TR

4.0A600VN-CHANNELPOWERMOSFET

FEATURES *VDS=600V *ID=4.0A *RDS(ON)=2.Ω@VGS=10V. *UltraLowgatecharge(typical15nC) *Lowreversetransfercapacitance(CRSS=typical8.0pF) *Fastswitchingcapability *Avalancheenergyspecified *Improveddv/dtcapability,highruggedness

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ4N60D-TR

4.0A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ4N60F-LI

4.0A600VN-CHANNELPOWERMOSFET

FEATURES *VDS=600V *ID=4.0A *RDS(ON)=2.Ω@VGS=10V. *UltraLowgatecharge(typical15nC) *Lowreversetransfercapacitance(CRSS=typical8.0pF) *Fastswitchingcapability *Avalancheenergyspecified *Improveddv/dtcapability,highruggedness

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ4N60F-LI

4.0A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ4N60-LI

4.0A600VN-CHANNELPOWERMOSFET

FEATURES *VDS=600V *ID=4.0A *RDS(ON)=2.Ω@VGS=10V. *UltraLowgatecharge(typical15nC) *Lowreversetransfercapacitance(CRSS=typical8.0pF) *Fastswitchingcapability *Avalancheenergyspecified *Improveddv/dtcapability,highruggedness

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ4N60-LI

4.0A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

P4N60FI

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

PHB4N60E

PowerMOStransistorsAvalancheenergyrated

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP4N60E

PowerMOStransistorsAvalancheenergyrated

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP4N60E

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

PHX4N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. FEATURES ?Repet

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PJF4N60

600VN-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJP4N60

600VN-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

RMP4N60IP

N-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

RMP4N60LD

N-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

RMP4N60TI

N-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

RMP4N60TI

N-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

RMP4N60TI

N-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

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OMRON
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更多NJ4N60D-LI供應(yīng)商 更新時(shí)間2024-12-24 17:05:00