首頁 >NM-ISD3800>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NM-ISD3800 | 包裝:盒 功能:錄音/回放 類別:開發(fā)板,套件,編程器 評估和演示板及套件 描述:KIT DEV/DEMO ISD3800 DEMO3800 | NuvotonNuvoton Technology Corporation 新唐科技新唐科技股份有限公司 | Nuvoton | |
CentronicsModemsPrinterInterface | PURDY Purdy Electronics Corporation | PURDY | ||
LINEMATCHINGTRANSFORMER | ETAL ETAL Group | ETAL | ||
ISOLATEDFLYBACKTRANSFORMERS | MPSINDMPS Industries, Inc. 美國芯源 | MPSIND | ||
ThyristorSurgeSuppressors(TSS) FeaturesandBenefits Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Eliminatesovervoltagecausedbyfastrisingtransients Moisturesensitivitylevel:Level1 Weight69mg(approximate) Nondegenerative ResponseTimeis | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
ThyristorSurgeSuppressors(TSS) FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
ThyristorSurgeSuppressors(TSS) FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
ThyristorSurgeSuppressors(TSS) FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
ThyristorSurgeSuppressors(TSS) FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
ThyristorSurgeSuppressors(TSS) FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
ThyristorSurgeSuppressors(TSS) FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
Excellentcapabilityofabsorbingtransientsurge | JIEJIEJIEJIE MICROELECTRONICS CO.,Ltd 捷捷微電江蘇捷捷微電子股份有限公司 | JIEJIE | ||
ThyristorSurgeSuppressors(TSS) FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
Excellentcapabilityofabsorbingtransientsurge | JIEJIEJIEJIE MICROELECTRONICS CO.,Ltd 捷捷微電江蘇捷捷微電子股份有限公司 | JIEJIE | ||
ThyristorSurgeSuppressors(TSS) FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
Excellentcapabilityofabsorbingtransientsurge DESCRIPTION: PxxxxSCseriesthyristorsareatypeofsemi-conductcomponent.Theyaredesignedtoprotectbasebandequipmentfromdamagingovervoltagetransients.suchasmodems,telephones,linecards,answeringmachines,FAXmachines,T1/E1,xDSLandmore. FEATURES: ◇Excellentcapabilityo | JIEJIEJIEJIE MICROELECTRONICS CO.,Ltd 捷捷微電江蘇捷捷微電子股份有限公司 | JIEJIE | ||
ThyristorSurgeSuppressors(TSS) FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
Excellentcapabilityofabsorbingtransientsurge DEDRIPTION: PxxxxDseriesthyristorsareatypeofsemi-conductcomponent.Theyaredesignedtoprotectbasebandequipmentfromdamagingovervoltagetransients.suchasmodems,telephones,linecards,answeringmachines,FAXmachines,T1/E1,xDSLandmore. FEATURES: ◇Excellentcapabilit | JIEJIEJIEJIE MICROELECTRONICS CO.,Ltd 捷捷微電江蘇捷捷微電子股份有限公司 | JIEJIE | ||
THYRISTORSURGESUPPRESSORSTSS FEATURES: Excellentcapabilityofab Quickresponsetosurgev Eliminatesovervoltagecau Moisturesensitivityleve Nondegenerative machines,F absorbingtransientsurge urgevoltage(nsLevel) ecausedbyfastrisingtransients level:Level1 | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY | ||
Excellentcapabilityofabsorbingtransientsurge | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH |
產(chǎn)品屬性
- 產(chǎn)品編號:
NM-ISD3800
- 制造商:
Nuvoton Technology Corporation
- 類別:
開發(fā)板,套件,編程器 > 評估和演示板及套件
- 系列:
ChipCorder?
- 包裝:
盒
- 類型:
音頻
- 功能:
錄音/回放
- 使用的 IC/零件:
ISD3800
- 所含物品:
板
- 描述:
KIT DEV/DEMO ISD3800 DEMO3800
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
56000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
NUVOTON |
2 |
詢價 | |||||
CANDD |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費送樣 |
詢價 | ||
MURATA |
12+ |
DIP |
1380 |
一定是全新原廠原裝現(xiàn)貨/代理穩(wěn)壓模塊 |
詢價 | ||
MURATA/村田 |
18+ |
SMD |
288000 |
原裝正品價格優(yōu)勢 |
詢價 | ||
Murata |
1941+ |
N/A |
303 |
加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物 |
詢價 | ||
MURATA/村田 |
2021+ |
DIP |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
MURATA |
20+ |
電源模塊 |
1520 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Murata Power Solutions |
23+ |
SMD |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
Murata |
22+ |
NA |
303 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 |
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