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Packing List Envelopes

3M

3M Electronics

NP30N04QUK

40 V – 30 A – Dual N-channel Power MOS FET Application: Automotive

Description NP30N04QUKisadualN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)=8m?MAX.(VGS=10V,ID=15A) ?LowCiss:Ciss=1600pFTYP.(VDS=25V) ?Designedforautomotiveapplicationa

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP30N04QUK-E1-AY

40 V – 30 A – Dual N-channel Power MOS FET Application: Automotive

Description NP30N04QUKisadualN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)=8m?MAX.(VGS=10V,ID=15A) ?LowCiss:Ciss=1600pFTYP.(VDS=25V) ?Designedforautomotiveapplicationa

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP30N04QUK-E2-AY

40 V – 30 A – Dual N-channel Power MOS FET Application: Automotive

Description NP30N04QUKisadualN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)=8m?MAX.(VGS=10V,ID=15A) ?LowCiss:Ciss=1600pFTYP.(VDS=25V) ?Designedforautomotiveapplicationa

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055HDE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=24mΩMAX.(VGS=10V,ID=16A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055HDE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=24mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP32N055HHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffect Transistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=25mΩMAX.(VGS=10V,ID=16A) ?LowCis

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055HHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP32N055HLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistordesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerating ?Superlowon-stateresistance RDS(on)1=24mΩMAX.(VGS=10V,ID=16A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055HLE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=24mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    NP3

  • 制造商：

    Energizer Battery Company

  • 功能描述：

    BATTERY DIGITAL CAMERA FUJI LI-ION

供應(yīng)商型號品牌批號封裝庫存備注價格
正泰
24+
N/A
2100
正泰全系列在售
 詢價
NEC
23+
TO-252
28610
詢價
24+
BGA
3000
公司存貨
 詢價
AMCC
23+
BGA
3700
絕對全新原裝!現(xiàn)貨!特價!請放心訂購!
 詢價
ON
11+
5000
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
NEC
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
ON
17+
SMB
6200
100%原裝正品現(xiàn)貨
 詢價
AMCC
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
AMCC
24+
BGA
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
AMCC
0427/0433
BGA
1789
全新原裝絕對自己公司現(xiàn)貨特價!
 詢價
更多NP3供應(yīng)商 更新時間2025-2-4 11:00:00

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