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NP50P06KDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP50P06KDG

-60V – -50A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=17m?Max.(VGS=-10V,ID=-25A) RDS(on)=23m?Max.(VGS=-4.5V,ID=-25A) ?Lowinputcapacitance:Ciss=50

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P06KDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP50P06KDG-E1-AY

-60V – -50A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=17m?Max.(VGS=-10V,ID=-25A) RDS(on)=23m?Max.(VGS=-4.5V,ID=-25A) ?Lowinputcapacitance:Ciss=50

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P06KDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP50P06KDG_15

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P06KDG-E1-AYNote

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P06KDG-E2-AYNote

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P06SDG

-60V–-50A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=16.5m?Max.(VGS=-10V,ID=-25A) RDS(on)=23.0m?Max.(VGS=-4.5V,ID=-25A) ?Lowinputcapacitance:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

SQD50P06

AutomotiveP-Channel60V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    NP50P06KDG

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
TO-263
503169
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
NEC
24+
TO-252
8866
詢價
NEC
1415+
TO-252
28500
全新原裝正品,優(yōu)勢熱賣
 詢價
NEC
23+
TO-252
11716
全新原裝
 詢價
RENESAS
24+
TO-263
5000
只做原裝公司現(xiàn)貨
 詢價
NEC
23+
TO-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
NEC
18+
TO-252
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價
Renesas
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
NEC
6000
面議
19
TO-252
 詢價
Renesas
18+
TO-263
41200
原裝正品,現(xiàn)貨特價
 詢價
更多NP50P06KDG供應(yīng)商 更新時間2025-4-26 15:14:00

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