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NP80N03NDE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N03NDE

MOS FIELD EFFECT TRANSISTOR

FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03NDE

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03NDE-S18-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N03NDE-S18-AY

MOS FIELD EFFECT TRANSISTOR

FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03NLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=26

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03NLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N03NLE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

PJD80N03

30VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJU80N03

30VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

詳細(xì)參數(shù)

  • 型號：

    NP80N03NDE

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
2020+
TO-262
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
NEC
22+
TO-220
20000
保證原裝正品,假一陪十
 詢價
NEC
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價
ST
TO-262
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價
NEC
23+
TO-220
33000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
NEC
22+
TO-220
100000
代理渠道/只做原裝/可含稅
 詢價
RENESAS/瑞薩
23+
TO-220
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價
RENESAS/瑞薩
22+
TO-262
12500
瑞薩全系列在售,終端可出樣品
 詢價
RENESAS/瑞薩
22+
TO-262
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
NA
23+
TO262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多NP80N03NDE供應(yīng)商 更新時間2025-1-27 9:20:00

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