首頁(yè) >NP80N06MLG>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
NP80N06MLG | MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
NP80N06MLG | N-Channel 60 V (D-S) MOSFET FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization: | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | |
NP80N06MLG | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
NP80N06MLG | Product Scout Automotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-Channel 60 V (D-S) MOSFET FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization: | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細(xì)參數(shù)
- 型號(hào):
NP80N06MLG
- 制造商:
RENESAS
- 制造商全稱(chēng):
Renesas Technology Corp
- 功能描述:
MOS FIELD EFFECT TRANSISTOR
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
R |
24+ |
T0-220 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
R |
2020+ |
T0-220 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
RENESAS/瑞薩 |
2022+ |
TO-220 |
32500 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
RENESAS/瑞薩 |
23+ |
TO-220 |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
VBsemi/臺(tái)灣微碧 |
T0-220 |
893993 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
RENESAS/瑞薩 |
2022+ |
TO-220 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
RENESAS/瑞薩 |
22+ |
TO-220 |
12500 |
瑞薩全系列在售,終端可出樣品 |
詢價(jià) | ||
RENESAS/瑞薩 |
20+ |
TO-220 |
32500 |
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝 |
詢價(jià) | ||
RENESAS/瑞薩 |
22+ |
TO-220 |
9000 |
專(zhuān)業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu) |
詢價(jià) | ||
R |
24+ |
T0-TO-220 |
12300 |
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) |
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