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NP88N075EUE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N075EUE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075EUE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP88N075EUE-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N075EUE-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075EUE-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N075EUE-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075EUE_15

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075EUE-E1-AYNote1,2

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075EUE-E2-AYNote1,2

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075KUE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N075KUE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP88N075KUE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075KUE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075MUE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075MUE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075MUE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP88N075MUE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N075NUE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP88N075NUE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào):

    NP88N075EUE

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
17+
TO-263
31518
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NEC
23+
TO-263
10000
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NEC
21+
SOT-263
10000
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日本NEC
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TO-263
33000
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NEC
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TO-263
6000
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RENESAS/瑞薩
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30000
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NEC
24+
TO-263
8866
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R
24+
TO263
5000
只做原裝公司現(xiàn)貨
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日本NEC
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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NEC
6000
面議
19
TO-263
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更多NP88N075EUE供應(yīng)商 更新時(shí)間2024-11-14 14:00:00