首頁 >NP90N055VUK>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NP90N055VUK | MOS FIELD EFFECT TRANSISTOR Description TheNP90N055VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.85mΩMAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=4000pFTYP.(VDS=25V) ?Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
NP90N055VUK | MOS FIELD EFFECT TRANSISTOR Description TheNP90N055VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.85m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=4000pFTYP.(VDS=25V) ?Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
NP90N055VUK | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
NP90N055VUK | Product Scout Automotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR Description TheNP90N055VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.85m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=4000pFTYP.(VDS=25V) ?Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP90N055VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.85mΩMAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=4000pFTYP.(VDS=25V) ?Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP90N055VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.85m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=4000pFTYP.(VDS=25V) ?Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP90N055VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.85mΩMAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=4000pFTYP.(VDS=25V) ?Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP90N055VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.85m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=4000pFTYP.(VDS=25V) ?Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Corporation | IXYS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.8mΩMAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=4900pFTYP.(VDS=25V) ?Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細(xì)參數(shù)
- 型號:
NP90N055VUK
- 制造商:
RENESAS
- 制造商全稱:
Renesas Technology Corp
- 功能描述:
MOS FIELD EFFECT TRANSISTOR
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
RENESAS |
TO-252 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
VB |
21+ |
D-Pak |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
RENESAS/瑞薩 |
2022+ |
TO-252 |
50000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價 | ||
VB |
D-Pak |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
R |
23+ |
D-PAK |
6000 |
原裝正品,支持實單 |
詢價 | ||
RENESAS/瑞薩 |
22+ |
TO-252 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
TO-252 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
RENESAS/瑞薩 |
2022+ |
TO-252 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 | ||
RENESAS/瑞薩 |
22+ |
TO-252 |
12500 |
瑞薩全系列在售,終端可出樣品 |
詢價 | ||
RENESAS/瑞薩 |
22+ |
TO-252 |
9000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu) |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
更多- NP90N055VUK-E2-AY
- NP970482
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- NP972181 REV B
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- NPA
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- NPA2.2M50
- NPA20012
- NPA200220
- NPA-500-M-005-D
- NPA-500M-005G
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- NPA-500-M-030-A
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- NPAA3DC18V
- NPAA3DC3V
- NPAA3DC5V
- N-PAA50
- NPAA5DC18V
- NPAA5DC3V
- NPAA5DC5V
- N-PAA75
- NPAAS3DC18V
- NPAAS3DC3V
- NPAAS3DC5V
- NPAAS5DC12V
- NPAAS5DC24V
- NPAAS5DC4V
- NPAAS5DC6V
- N-PA-JJ-CAU
- N-PA-JJ-SUS
- NPAK-0016
- NPAK-1KPSIG-M
- NPAK-2FBA-6-3
- NPAK-3KPSI-D
- NPAK-TRS0