This device employs the Schottky Barrier principle in a large area

metal?to?silicon power diode. State?of?the?art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity protection diodes in surface mount

applications where compact size and weight are critical to the system.

Features

? Small Compact Surface Mountable Package with J?Bend Leads

? Rectangular Package for Automated Handling

? Highly Stable Oxide Passivated Junction

? Very Low Forward Voltage Drop (0.6 Volts Max @ 1.0 A, TJ = 25°C)

? Excellent Ability to Withstand Reverse Avalanche Energy Transients

? Guardring for Stress Protection

? NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable*

? These are Pb?Free Devices

Mechanical Characteristics

? Case: Epoxy, Molded

? Weight: 95 mg (approximately)

? Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

? Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

? Shipped in 12 mm Tape and Reel, 2500 units per reel

? Cathode Polarity Band

NRVBS130N屬于分立半導體產(chǎn)品 > 二極管 - 整流器 - 單。安森美半導體公司制造生產(chǎn)的NRVBS130N二極管 - 整流器 - 單單整流器二極管系列產(chǎn)品可用于讓電流僅沿一個方向流動，并且每個器件封裝都恰好實現(xiàn)該功能的一個實例。其他用途的二極管（包括齊納二極管和可變電容二極管）單獨列在各自的產(chǎn)品系列中，每個器件封裝中包含多個二極管的產(chǎn)品也是如此。