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NSBA113EDXV6中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

NSBA113EDXV6
廠商型號(hào)

NSBA113EDXV6

功能描述

Dual PNP Bias Resistor Transistors

文件大小

75.03 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱(chēng)

ONSEMI安森美半導(dǎo)體

中文名稱(chēng)

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-15 18:08:00

NSBA113EDXV6規(guī)格書(shū)詳情

Dual PNP Bias Resistor Transistors R1 = 1 kΩ, R2 = 1 kΩ

PNP Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

? Simplifies Circuit Design

? Reduces Board Space

? Reduces Component Count

? S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

產(chǎn)品屬性

  • 型號(hào):

    NSBA113EDXV6

  • 功能描述:

    開(kāi)關(guān)晶體管 - 偏壓電阻器 100mA 50V Dual PNP

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶體管極性:

    NPN/PNP

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    直流集電極/Base Gain hfe

  • Min:

    200 mA

  • 最大工作頻率:

    集電極—發(fā)射極最大電壓

  • VCEO:

    50 V

  • 集電極連續(xù)電流:

    150 mA

  • 功率耗散:

    200 mW

  • 封裝:

    Reel

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onsemi(安森美)
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SOT-963
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ONS
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NSBA113EDXV6
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ON
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