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NSBA114EDXV6T1G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

NSBA114EDXV6T1G
廠商型號

NSBA114EDXV6T1G

功能描述

Dual PNP Bias Resistor Transistors

文件大小

123.96 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-28 18:41:00

NSBA114EDXV6T1G規(guī)格書詳情

Dual PNP Bias Resistor Transistors R1 = 10 kΩ, R2 = 10 kΩ

PNP Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

? Simplifies Circuit Design

? Reduces Board Space

? Reduces Component Count

? S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable*

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

產(chǎn)品屬性

  • 型號:

    NSBA114EDXV6T1G

  • 功能描述:

    開關(guān)晶體管 - 偏壓電阻器 100mA 50V Dual PNP

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶體管極性:

    NPN/PNP

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    直流集電極/Base Gain hfe

  • Min:

    200 mA

  • 最大工作頻率:

    集電極—發(fā)射極最大電壓

  • VCEO:

    50 V

  • 集電極連續(xù)電流:

    150 mA

  • 功率耗散:

    200 mW

  • 封裝:

    Reel

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