NSBC114EDXV6分立半導(dǎo)體產(chǎn)品的晶體管-雙極（BJT）-陣列-預(yù)偏置規(guī)格書PDF中文資料

NSBC114EDXV6屬于分立半導(dǎo)體產(chǎn)品的晶體管-雙極（BJT）-陣列-預(yù)偏置。由安森美半導(dǎo)體公司制造生產(chǎn)的NSBC114EDXV6晶體管 - 雙極（BJT）- 陣列 - 預(yù)偏置預(yù)偏置的雙極晶體管陣列包含兩個或更多雙極晶體管，同時電阻以可能有用的方式連接到每個晶體管；通常在每個晶體管的發(fā)射極和基極端子之間有一個電阻，同時有另一個電阻連接到每個晶體管的基極端子和器件封裝上的用戶可訪問引腳。

Dual NPN Bias Resistor Transistors R1 = 10 kΩ, R2 = 10 kΩ

NPN Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

? Simplifies Circuit Design

? Reduces Board Space

? Reduces Component Count

? S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable*

? These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant