首頁 >NSI6602A-DLAR>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
20VComplementaryEnhancementModeMOSFET | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
20VComplementaryEnhancementModeMOSFET Features ?AdvancedTrenchProcessTechnology ?SpeciallyDesignedforSwitchLoad,PWMApplication,etc. ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
20VComplementaryEnhancementModeMOSFET Features ?AdvancedTrenchProcessTechnology ?SpeciallyDesignedforSwitchLoad,PWMApplication,etc. ?AEC-Q101qualified ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
SingleDevice9AOutput | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
9AMPADJUSTABLEINTEGRATEDSWITCHINGREGULATOR | TITexas Instruments 德州儀器美國(guó)德州儀器公司 | TI | ||
SingleDevice9AOutput | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
SingleDevice9AOutput | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
SingleDevice9AOutput | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
SingleDevice9AOutput | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
SingleDevice9AOutput | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
SingleDevice9AOutput | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
NandP-ChannelEnhancementModePowerMOSFET GeneralFeatures N-Channel VDS=30V,ID=3.5A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
SiCSchottkyBarrierDiodeBareDie Features 1)Lowforwardvoltage 3)Temperatureindependentswitchingbehavior 2)Negligiblerecoverytime/current 4)Highsurgecurrentcapability Applications ?SwitchModePowerSupply ?EVCharger ?UninterruptiblePowerSupply ?AirConditioner ?SolarInverter ?MotorDrive | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
N&PPairEnhancementModeMOSFET | SYNC-POWERSYNC POWER Crop. 擎力科技擎力科技股份有限公司 | SYNC-POWER | ||
N-andP-Channel20V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
DualN&PChannelEnhancementModeMOSFET | STANSON Stanson Technology | STANSON | ||
N-Ch:3.3A,30V,RDS(ON)65mP-Ch:-2.3A,-30V,RDS(ON)120mN&P-ChannelEnhancementModeMos.FET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-andP-Channel20V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
High-SpeedSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
納芯微電子 |
21+ |
LGA13 |
66 |
全新原裝鄙視假貨15118075546 |
詢價(jià) | ||
NOVOSENSE/納芯微 |
21+ |
LGA-13 |
3000 |
保證原裝正品,需要直接聯(lián)系張小姐,13544103396 |
詢價(jià) | ||
NOVOSENSE/納芯微 |
22+ |
24000 |
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu) |
詢價(jià) | |||
NOVOSENSE(納芯微) |
10 |
納芯微授權(quán)代理,自營(yíng)現(xiàn)貨 |
詢價(jià) | ||||
NOVOSENSE/納芯微 |
23+ |
LGA13 |
45000 |
納芯微全系列在售,可出樣品 |
詢價(jià) | ||
NOVOSENSE/納芯微 |
23+ |
LGA13 |
25000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu) |
詢價(jià) | ||
23+ |
NA |
6800 |
原裝正品,力挺實(shí)單 |
詢價(jià) | |||
NOVOSENSE |
22+ |
SMD |
20000 |
詢價(jià) | |||
NOVOSENSE |
22+ |
SOP-16 |
5980 |
原包裝原標(biāo)現(xiàn)貨,假一罰十, |
詢價(jià) | ||
NOVO |
2334 |
原裝現(xiàn)貨實(shí)單必成 只做原裝! |
詢價(jià) |
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