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PJS6602

20VComplementaryEnhancementModeMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJS6602

20VComplementaryEnhancementModeMOSFET

Features ?AdvancedTrenchProcessTechnology ?SpeciallyDesignedforSwitchLoad,PWMApplication,etc. ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJS6602-AU

20VComplementaryEnhancementModeMOSFET

Features ?AdvancedTrenchProcessTechnology ?SpeciallyDesignedforSwitchLoad,PWMApplication,etc. ?AEC-Q101qualified ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PT6602

SingleDevice9AOutput

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

PT6602

9AMPADJUSTABLEINTEGRATEDSWITCHINGREGULATOR

TITexas Instruments

德州儀器美國(guó)德州儀器公司

PT6602F

SingleDevice9AOutput

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

PT6602G

SingleDevice9AOutput

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

PT6602L

SingleDevice9AOutput

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

PT6602M

SingleDevice9AOutput

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

PT6602Q

SingleDevice9AOutput

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

PT6602R

SingleDevice9AOutput

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

RM6602

NandP-ChannelEnhancementModePowerMOSFET

GeneralFeatures N-Channel VDS=30V,ID=3.5A RDS(ON)

RECTRON

Rectron Semiconductor

S6602

SiCSchottkyBarrierDiodeBareDie

Features 1)Lowforwardvoltage 3)Temperatureindependentswitchingbehavior 2)Negligiblerecoverytime/current 4)Highsurgecurrentcapability Applications ?SwitchModePowerSupply ?EVCharger ?UninterruptiblePowerSupply ?AirConditioner ?SolarInverter ?MotorDrive

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

SPC6602

N&PPairEnhancementModeMOSFET

SYNC-POWERSYNC POWER Crop.

擎力科技擎力科技股份有限公司

STC6602

N-andP-Channel20V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STC6602

DualN&PChannelEnhancementModeMOSFET

STANSON

Stanson Technology

STT6602

N-Ch:3.3A,30V,RDS(ON)65mP-Ch:-2.3A,-30V,RDS(ON)120mN&P-ChannelEnhancementModeMos.FET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

STT6602

N-andP-Channel20V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

TPC6602

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPC6602

High-SpeedSwitchingApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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21+
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66
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3000
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10
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23+
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45000
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25000
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NA
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5980
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2334
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更多NSI6602A-DLAR供應(yīng)商 更新時(shí)間2024-11-19 10:00:00