首頁 >NSI6602C-DSWR>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
20VComplementaryEnhancementModeMOSFET | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
20VComplementaryEnhancementModeMOSFET Features ?AdvancedTrenchProcessTechnology ?SpeciallyDesignedforSwitchLoad,PWMApplication,etc. ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
20VComplementaryEnhancementModeMOSFET Features ?AdvancedTrenchProcessTechnology ?SpeciallyDesignedforSwitchLoad,PWMApplication,etc. ?AEC-Q101qualified ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
SingleDevice9AOutput | TI1Texas Instruments 德州儀器 | TI1 | ||
9AMPADJUSTABLEINTEGRATEDSWITCHINGREGULATOR | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
SingleDevice9AOutput | TI1Texas Instruments 德州儀器 | TI1 | ||
SingleDevice9AOutput | TI1Texas Instruments 德州儀器 | TI1 | ||
SingleDevice9AOutput | TI1Texas Instruments 德州儀器 | TI1 | ||
SingleDevice9AOutput | TI1Texas Instruments 德州儀器 | TI1 | ||
SingleDevice9AOutput | TI1Texas Instruments 德州儀器 | TI1 | ||
SingleDevice9AOutput | TI1Texas Instruments 德州儀器 | TI1 | ||
NandP-ChannelEnhancementModePowerMOSFET GeneralFeatures N-Channel VDS=30V,ID=3.5A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
SiCSchottkyBarrierDiodeBareDie Features 1)Lowforwardvoltage 3)Temperatureindependentswitchingbehavior 2)Negligiblerecoverytime/current 4)Highsurgecurrentcapability Applications ?SwitchModePowerSupply ?EVCharger ?UninterruptiblePowerSupply ?AirConditioner ?SolarInverter ?MotorDrive | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
N&PPairEnhancementModeMOSFET | SYNC-POWERSYNC POWER Crop. 擎力科技擎力科技股份有限公司 | SYNC-POWER | ||
N-andP-Channel20V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
DualN&PChannelEnhancementModeMOSFET | STANSON Stanson Technology | STANSON | ||
N-Ch:3.3A,30V,RDS(ON)65mP-Ch:-2.3A,-30V,RDS(ON)120mN&P-ChannelEnhancementModeMos.FET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-andP-Channel20V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
High-SpeedSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NUVOTON(新唐) |
23+ |
TO-252 |
5000 |
誠信服務(wù),絕對原裝原盤 |
詢價 | ||
納芯微電子 |
21+ |
SOW16 |
111 |
全新原裝鄙視假貨15118075546 |
詢價 | ||
NOVOSENSE/納芯微 |
22+ |
24000 |
原裝正品現(xiàn)貨,實單可談,量大價優(yōu) |
詢價 | |||
NOVOSENSE/納芯微 |
23+ |
SOW16 |
45000 |
納芯微全系列在售,可出樣品 |
詢價 | ||
NOVOSENSE/納芯微 |
23+ |
SOW16 |
25000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu) |
詢價 | ||
NOVOSENSE |
23+ |
NA |
8 |
全新原裝正品 現(xiàn)貨可訂 |
詢價 | ||
NOVOSENSE |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
NOVOSENSE/納芯微 |
21+ |
SOIC16W |
3000 |
保證原裝正品,需要直接聯(lián)系張小姐,13544103396 |
詢價 | ||
NOVOSENSE(納芯微) |
2345 |
3000 |
納芯微授權(quán)代理,自營現(xiàn)貨 |
詢價 | |||
NOVOSENSE |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 |
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