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NTE581

GeneralPurposeSiliconRectifierFastRecovery

Features: ●FastSwitching ●LowLeakage ●LowForwardVoltageDrop ●HighCurrentCapability ●HighSurgeCapability ●HighReliability

NTE

NTE Electronics

OXK581

Lowphasenoise,Anti-vibrationOCXO

BOWEIBOWEI Integrated Circuits CO.,LTD.

博威集成電路河北博威集成電路有限公司

SAV-581

E-PHEMT0.45-6GHz

MINI

Mini-Circuits

SM581X

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

HORNBYNantong Hornby Electronic Co.,Ltd

南通康比電子南通康比電子有限公司

TAV-581

E-PHEMT0.45-6GHz

MINI

Mini-Circuits

TLP581

GaAIAsINFRAREDEMITTINGDIODEANDNPNSILICONPHOTO-TRANSISTOR

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

TSOP581

IRReceiverModulesforRemoteControlSystems

DESCRIPTION Theseproductsareminiaturizedreceiversforinfraredremotecontrolsystems.APINdiodeandapreamplifierareassembledonaleadframe,theepoxypackageactsasanIRfilter. FEATURES ?Lowsupplycurrent ?Photodetectorandpreamplifierinonepackage ?Internalfilterfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSOP581

IRReceiverModulesforRemoteControlSystems

DESCRIPTION Theseproductsareminiaturizedreceiversforinfrared remotecontrolsystems.APINdiodeandapreamplifierare assembledonaleadframe,theepoxypackagecontainsan IRfilter.Thedemodulatedoutputsignalcanbedirectly connectedtoamicroprocessorfordecoding. TheTSOP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSOP581..

IRReceiverModulesforRemoteControlSystems

DESCRIPTION Theseproductsareminiaturizedreceiversforinfrared remotecontrolsystems.APINdiodeandapreamplifierare assembledonaleadframe,theepoxypackagecontainsan IRfilter.Thedemodulatedoutputsignalcanbedirectly connectedtoamicroprocessorfordecoding. TheTSOP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

UG-581

Full-featuredevaluationboard

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

UPB581A

3GHzINPUTDIVIDEBY2PRESCALERICFORDBSTUNERS

μPB1508GVisa3.0GHzinputdivideby2prescalerICforDBStunerapplications.μPB1508GVcanmakeVHF/UHFbandPLLfrequencysynthesizerapplytoDBS/ECStuners.μPB1508GVisashrinkpackageversionofμPB584Gsothatthissmallpackagecontributestoreducethemountingspace. μPB1508GVism

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPB581B

DIVIDE-BY-2PRESCALER

DESCRIPTION TheUPB581seriesofdevicesaredivide-by-2siliconbipolardigitalprescalers.Theyfeaturehighfrequencyresponseandoperatefromasingle5voltsupply.Theseriesisavailableintwopackagestyles:8leadceramicflatpackage(UPB581B)andan8pinDIP(UPB581C).Application

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPB581C

DIVIDE-BY-2PRESCALER

DESCRIPTION TheUPB581seriesofdevicesaredivide-by-2siliconbipolardigitalprescalers.Theyfeaturehighfrequencyresponseandoperatefromasingle5voltsupply.Theseriesisavailableintwopackagestyles:8leadceramicflatpackage(UPB581B)andan8pinDIP(UPB581C).Application

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPB581C

3GHzINPUTDIVIDEBY2PRESCALERICFORDBSTUNERS

μPB1508GVisa3.0GHzinputdivideby2prescalerICforDBStunerapplications.μPB1508GVcanmakeVHF/UHFbandPLLfrequencysynthesizerapplytoDBS/ECStuners.μPB1508GVisashrinkpackageversionofμPB584Gsothatthissmallpackagecontributestoreducethemountingspace. μPB1508GVism

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

VDD581LCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD581LNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD581MCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD581MNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD581SCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD581SNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

晶體管資料

  • 型號(hào):

    NSP581

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠(chǎng)家:

  • 制作材料:

    Si-N/P

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    100V

  • 最大電流允許值:

    3A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    BD581,

  • 最大耗散功率:

    30W

  • 放大倍數(shù):

  • 圖片代號(hào):

    B-10

  • vtest:

    100

  • htest:

    999900

  • atest:

    3

  • wtest:

    30

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更多NSP581供應(yīng)商 更新時(shí)間2025-1-8 17:02:00