NT5SV64M4AT中文資料etc未分類(lèi)制造商數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

[Nanya]

Description

The NT5SV64M4AT, NT5SV32M8AT, and NT5SV16M16AT are four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4 Bank, respectively. These synchronous devices achieve high-speed data transfer rates of up to 133MHz by employing a pipeline chip architecture that synchronizes the output data to a system clock. The chip is fabricated with NTC’s advanced 256Mbit single transistor CMOS DRAM process technology.

Features

? High Performance: (TABLE)

? Single Pulsed RAS Interface

? Fully Synchronous to Positive Clock Edge

? Four Banks controlled by BA0/BA1 (Bank Select)

? Programmable CAS Latency: 2, 3

? Programmable Burst Length: 1, 2, 4, 8

? Programmable Wrap: Sequential or Interleave

? Multiple Burst Read with Single Write Option

? Automatic and Controlled Precharge Command

? Data Mask for Read/Write control (x4, x8)

? Dual Data Mask for byte control (x16)

? Auto Refresh (CBR) and Self Refresh

? Suspend Mode and Power Down Mode

? Standard Power operation

? 8192 refresh cycles/64ms

? Random Column Address every CK (1-N Rule)

? Single 3.3V ± 0.3V Power Supply

? LVTTL compatible

? Package: 54-pin 400 mil TSOP-Type II

? -7K parts for PC133 2-2-2 operation

-75B parts for PC133 3-3-3 operation

-8B parts for PC100 2-2-2 operation