首頁 >NTD4804N-1G>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NTD4804N-1G | Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK MOSFET–Power,Single,N-Channel,DPAK/IPAK30V,117A Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?AECQ101Qualified?NVD4804N ?TheseDevicesarePb?FreeandareRoHSCompliant A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NTD4804N-1G | N-Channel 30-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=124A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號(hào):
NTD4804N-1G
- 功能描述:
MOSFET NFET 30V 117A 4MOHM
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON |
24+ |
DPAK3(SINGLEGAUGE |
8866 |
詢價(jià) | |||
ON |
23+ |
TO-251 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
ON |
6000 |
面議 |
19 |
DPAK3(SING |
詢價(jià) | ||
ONS |
24+ |
DPAK-3 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
VBSEMI/臺(tái)灣微碧 |
23+ |
TO-251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VBsemi |
23+ |
TO251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VB |
21+ |
TO-251 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
VBsemi |
21+ |
TO251 |
10065 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ON Semiconductor |
2022+ |
TO-251-3 短引線,IPak,TO-251A |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
VBsemi |
TO251 |
6000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) |
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