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NTD5802N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=101A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTD5802N

Power MOSFET 40 V, Single N??hannel, 101 A DPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD5802N

Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD5802N

Power MOSFET 40 V, Single N??hannel, 101 A DPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD5802N

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

NTD5802NT4G

N-channel Advanced Mode Power MOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

NTD5802N_14

Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD5802NS

N-Channel 40V(D-S) MOSFET

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

NTD5802NT4G

Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD5802NT4G

Power MOSFET 40 V, Single N??hannel, 101 A DPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTE5802

NTE5800thruNTE5809AxialLeadStandardRecoverySiliconRectifiers,3Amp,DO27

Description: TheNTE5800throughNTE5809siliconrectifiersaredesignedforuseinpowersuppliesandotherapplicationshavingneedofadevicewiththefollowingfeatures: ●HighCurrenttoSmallSize ●HighSurgeCurrentCapability ●LowForwardVoltageDrop

NTE

NTE Electronics

NVD5802N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=101A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NVD5802N

PowerMOSFET40V,SingleN??hannel,101ADPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PT5802

18AOutputCurrent

TI1Texas Instruments

德州儀器

PT5802

18-A5-VInputAdjustableIntegratedSwitchingRegulator

ETCList of Unclassifed Manufacturers

未分類制造商

SIDR5802EP

N-Channel80V(D-S)175°CMOSFET

FEATURES ?TrenchFET?GenVpowerMOSFET ?VerylowRDS-Qgfigure-of-merit(FOM) ?TunedforthelowestRDS-QossFOM ?100RgandUIStested ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Synchronousrectification ?Prima

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIR5802DP

N-Channel80V(D-S)MOSFET

FEATURES ?TrenchFET?GenVpowerMOSFET ?Ultra-lowRDSxQgFOMproduct ?OptimizedQgd/Qgsratio ?Excellentefficiencyperformancein powersupplies ?100RgandUIStested ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SPD5802

LOWLEAKAGE2.0AMPS50-150VOLTS25nsHYPERFASTRECOVERYRECTIFIER

SSDI

Solid States Devices, Inc

SPD5802

HYPERFASTRECOVERYRECTIFIER

SSDI

Solid States Devices, Inc

SPD5802S

LOWLEAKAGE2.0AMPS50-150VOLTS25nsHYPERFASTRECOVERYRECTIFIER

SSDI

Solid States Devices, Inc

詳細(xì)參數(shù)

  • 型號：

    NTD5802N

  • 制造商：

    ONSEMI

  • 制造商全稱：

    ON Semiconductor

  • 功能描述：

    Power MOSFET 40 V, Single N−Channel, 101 A DPAK

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ON/安森美
2024
TO-252
505348
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商
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ON
23+
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11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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ON
1822+
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9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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ON
20+
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36900
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ON/安森美
21+
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30000
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ON/安森美
23+
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10000
公司只做原裝正品
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ON/安森美
23+
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50000
全新原裝正品現(xiàn)貨,支持訂貨
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ON/安森美
21+
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10000
原裝現(xiàn)貨假一罰十
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ON/安森美
22+
TO-252
9000
原裝正品
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ON(安森美)
6000
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更多NTD5802N供應(yīng)商 更新時(shí)間2024-12-27 16:18:00

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