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NTD6N15

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NTD6N15

N-Channel MOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

FQB6N15

150VN-ChannelMOSFET

Features ?6.4A,150V,RDS(on)=0.6?@VGS=10V ?Lowgatecharge(typical6.5nC) ?LowCrss(typical9.6pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability ?175°Cmaximumjunctiontemperaturerating

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD6N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI6N15

150VN-ChannelMOSFET

Features ?6.4A,150V,RDS(on)=0.6?@VGS=10V ?Lowgatecharge(typical6.5nC) ?LowCrss(typical9.6pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability ?175°Cmaximumjunctiontemperaturerating

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.4A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQP6N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF6N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQU6N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

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更多NTD6N15供應商 更新時間2025-2-8 14:30:00

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