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NTE2361

Silicon Complementary Transistors High Speed Switch

HighSpeedSwitch Description: TheNTE2361(NPN)andNTE2362(PNP)complimentarysilicontransistorsaredesignedforgeneral–purposeamplifierandhighspeedswitchingapplications.Thehighgainofthesedevicesmakesitpossibleforthemtobedrivendirectlyfromintegratedcircuits.

NTE

NTE Electronics

PP2361

HeatShrinkTubing

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

RF2361

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

RFMD

RF Micro Devices

RF2361

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

RFMD

RF Micro Devices

RF2361

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

ProductDescription TheRF2361isalownoiseamplifierwithaveryhighdynamicrangedesignedfordigitalcellularapplications.Thedevicefunctionsasanoutstandingfrontendlownoiseamplifierorpoweramplifierdriveramplifierinthetransmitchainofdigitalsubscriberunitswherelowt

RFMD

RF Micro Devices

RF2361PCBA-D

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

RFMD

RF Micro Devices

RF2361PCBA-D

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

RFMD

RF Micro Devices

RF2361PCBA-D

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

ProductDescription TheRF2361isalownoiseamplifierwithaveryhighdynamicrangedesignedfordigitalcellularapplications.Thedevicefunctionsasanoutstandingfrontendlownoiseamplifierorpoweramplifierdriveramplifierinthetransmitchainofdigitalsubscriberunitswherelowt

RFMD

RF Micro Devices

RF2361PCBA-L

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

ProductDescription TheRF2361isalownoiseamplifierwithaveryhighdynamicrangedesignedfordigitalcellularapplications.Thedevicefunctionsasanoutstandingfrontendlownoiseamplifierorpoweramplifierdriveramplifierinthetransmitchainofdigitalsubscriberunitswherelowt

RFMD

RF Micro Devices

RF2361PCBA-L

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

RFMD

RF Micro Devices

RF2361PCBA-L

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

RFMD

RF Micro Devices

SMG2361P

P-ChannelEnhancementMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SMG2361P

P-Channel60-V(D-S)MOSFET

FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?P-Channel ?175°COperatingTemperature ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SQ2361AEES

AutomotiveP-Channel40V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SQ2361AEES

AutomotiveP-Channel30V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SQ2361AEES

AutomotiveP-Channel60V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SQ2361AEES

AutomotiveP-Channel80V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SQ2361AEES

AutomotiveN-Channel40V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SQ2361AEES

AutomotiveP-Channel60V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SQ2361AEES

AutomotiveP-Channel20V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號:

    NTE2361

  • 制造商:

    NTE Electronics

  • 功能描述:

    TRANSISTOR NPN SILICON 60V IC=0.5A TO-92 TYPE CASE TF=70NS HIGH SPEED SWITCH COM

  • 功能描述:

    T-NPN-SI HI SPEED SWITCH

  • 功能描述:

    TO-92 NPN HI-SPD SW

  • 功能描述:

    Trans GP BJT NPN 50V 0.5A 3-Pin

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
N/A
58000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
5
全新原裝 貨期兩周
詢價
2022+
1
全新原裝 貨期兩周
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NTE
23+
TO264
39275
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
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NTE
23+
65480
詢價
NTE ELECTRONICS
24+
con
10000
查現(xiàn)貨到京北通宇商城
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更多NTE2361供應(yīng)商 更新時間2024-12-23 10:06:00