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NTE2386

MOSFET N-Channel Enhancemen Mode, High Speed Switch

Description: TheNTE2386PowerMOSFETfeaturesadvantagessuchasvoltagecontrol,veryfastswitching,easeofparallelingandtemperaturestability,andissuitedforapplicationssuchasswitchingpowersupplies,motorcontrols,inverters,choppers,audioamplifiers,andhighenergypulseci

NTE

NTE Electronics

PP2386

HeatShrinkTubing

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

PT2386

3DEffectIC

PTCPrinceton Technology Corporation

普誠普誠科技

PT2386

3DEffectIC

DESCRIPTION PT2386isanenhanced3DAudioEffectICutilizingCMOSTechnologyspeciallydesignedforthenewgenerationofaudioequipments.PT2386featuresabassboosterfunctionaswellasthelatestPTC3DAudioTechnology,thereby,guaranteeinghighlypowerful,extensiveandtrue-to-life

PTCPrinceton Technology Corporation

普誠普誠科技

PT2386-S

3DEffectIC

PTCPrinceton Technology Corporation

普誠普誠科技

PT2386-S

3DEffectIC

DESCRIPTION PT2386isanenhanced3DAudioEffectICutilizingCMOSTechnologyspeciallydesignedforthenewgenerationofaudioequipments.PT2386featuresabassboosterfunctionaswellasthelatestPTC3DAudioTechnology,thereby,guaranteeinghighlypowerful,extensiveandtrue-to-life

PTCPrinceton Technology Corporation

普誠普誠科技

S2386

SiphotodiodeForvisibletoIR,general-purposephotometry

HAMAMATSUHamamatsu Photonics Co.,Ltd.

濱松光子濱松光子學株式會社

SGA-2386

DC-5000MHz,CascadableSiGeHBTMMICAmplifier

ProductDescription TheSGA-2386isahighperformanceSiGeHBTMMICAmplifier.ADarlingtonconfigurationfeaturing1micronemittersprovideshighFTandexcellentthermalperfomance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurrentbetweenjunctions.Cancellationof

SIRENZA

SIRENZA MICRODEVICES

SGA-2386

DC-2800MHzSiliconGermaniumHBTCascadeableGainBlock

ProductDescription StanfordMicrodevices’SGA-2386isahighperformancecascadeable50-ohmamplifierdesignedforoperationfroma2.7-voltsupply.ThisRFICusesthelatestSiliconGermaniumHeterostructureBipolarTransistor(SiGeHBT)processfeaturing1micronemitterswithFTupto65GHz.

STANFORD

Stanford Microdevices

SGA2386Z

DCto5000MHz,CASCADABLESiGeHBTMMICAMPLIFIER

RFMD

RF Micro Devices

詳細參數(shù)

  • 型號：

    NTE2386

  • 制造商：

    NTE Electronics

  • 功能描述：

    POWER MOSFET N-CHANNEL 600V ID=6.2A TO-3 CASE HIGH SPEED SWITCH ENHANCEMENT MODE

  • 功能描述：

    Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) TO-3

供應商型號品牌批號封裝庫存備注價格
24+
N/A
47000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
新
14
全新原裝 貨期兩周
 詢價
2022+
10
全新原裝 貨期兩周
 詢價
MOTO
24+
0
35210
一級代理/放心采購
 詢價
NTE
23+
39282
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
NTE ELECTRONICS
NDC
216
公司優(yōu)勢庫存 熱賣中!
 詢價
CCSEMI/芯能圓
23+
SOT-23
50000
原裝正品 支持實單
 詢價
NTE
2017+
SOT-23
39000
原裝正品,誠信經(jīng)營
 詢價
NTE
1742+
SOT23
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
 詢價
更多NTE2386供應商 更新時間2025-3-6 11:06:00

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