NTE261中文資料NTE數(shù)據(jù)手冊PDF規(guī)格書
NTE261規(guī)格書詳情
Description:
The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features:
? High DC Current Gain: hFE = 2500 Typ @ IC = 4A
? Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA
? Low Collector–Emitter Saturation Voltage:
VCE(sat) = 2V Max @ IC = 3A
= 4V Max @ IC = 5A
? Monolithic Construction with Built–In Base–Emitter Shunt Resistor
產(chǎn)品屬性
- 型號：
NTE261
- 制造商：
NTE Electronics
- 功能描述：
TRANSISTOR NPN SILICON DARLINGTON 100V IC=5A TO-220 CASE COMP'L TO NTE262
- 功能描述：
DARLINGTON TRANSISTOR NPN 100V TO-220
- 功能描述：
DARLINGTON TRANSISTOR, NPN, 100V, TO-220
- 功能描述：
T-NPN-DARL 100V HFE 1000
- 功能描述：
DARLINGTON TRANSISTOR, NPN, 100V, TO-220; Transistor
- Polarity：
NPN; Collector Emitter Voltage
- V(br)ceo：
100V; Power Dissipation
- Pd：
65W; DC Collector
- Current：
5A; DC Current Gain
- hFE：
2500; Operating Temperature
- Min：
-65C; No. of
- Pins：
3 ;RoHS
- Compliant：
Yes
- 功能描述：
Trans Darlington NPN 100V 5A 3-Pin(3+Tab) TO-220
