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首頁 >NTE27>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
NTE27	文件：22.57 Kbytes Page：2 Pages	Germanium PNP Transistor High Current, High Gain Amp Description: TheNTE27isaPNPgermaniumpowertransistordesignedforhighcurrentapplicationsrequiringhigh–gainandlowsaturationvoltages.	NTE NTE Electronics	NTE
NTE270	文件：24.87 Kbytes Page：2 Pages	Silicon Complementary Transistors Darlington Power Amp, Switch Description: TheNTE270(NPN)andNTE271(PNP)aresiliconDarlingtoncomplementarypowertransistorsinaTO218typepackagedesignedforgeneralpurposeamplifierandlowfrequencyswitchingapplications. Features: ?HighDCCurrentGain:hFE=1000Min@IC=5A,VCE=4V ?Collec	NTE NTE Electronics	NTE
NTE2708	文件：30.79 Kbytes Page：4 Pages	Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: TheNTE2708isanultra–violetlight–erasable,electricallyprogrammablereadonlymemory.Ithas8,192bitsorganizedas1024wordsof8–bitlength.ThisdeviceisfabricatedusingN–channelsilicon–gatetechnologyforhighspeedandsimpleinterfacewithMOSandbipolarcircuits	NTE NTE Electronics	NTE
NTE271	文件：24.87 Kbytes Page：2 Pages	Silicon Complementary Transistors Darlington Power Amp, Switch Description: TheNTE270(NPN)andNTE271(PNP)aresiliconDarlingtoncomplementarypowertransistorsinaTO218typepackagedesignedforgeneralpurposeamplifierandlowfrequencyswitchingapplications. Features: ?HighDCCurrentGain:hFE=1000Min@IC=5A,VCE=4V ?Collec	NTE NTE Electronics	NTE
NTE2716	文件：34.4 Kbytes Page：5 Pages	Integrated Circuit NMOS, 16K UV Erasable PROM Description: TheNTE2716isa16,384–bit(2048x8–bit)ErasableandElectricallyReprogrammablePROMina24–LeadDIPtypepackagedesignedforsystemdebugusageandsimilarapplicationsrequiringnonvolatilememorythatcouldbereprogrammedperiodically.Thetransparentlidonthepackagea	NTE NTE Electronics	NTE
NTE272	文件：22.38 Kbytes Page：2 Pages	Silicon Darlington Complementary Power Amplifiers Description: TheNTE272(NPN)andNTE273(PNP)aresiliconcomplementaryPowerAmplifiersinaTO202typecasedesignedforuseincomplementaryamplifiersanddriverapplications. Features: ?HighDCCurrentGain: hFE=25,000(Min)@IC=200mA =15,000(Min)@IC	NTE NTE Electronics	NTE
NTE273	文件：22.38 Kbytes Page：2 Pages	Silicon Darlington Complementary Power Amplifiers Description: TheNTE272(NPN)andNTE273(PNP)aresiliconcomplementaryPowerAmplifiersinaTO202typecasedesignedforuseincomplementaryamplifiersanddriverapplications. Features: ?HighDCCurrentGain: hFE=25,000(Min)@IC=200mA =15,000(Min)@IC	NTE NTE Electronics	NTE
NTE2732A	文件：45.73 Kbytes Page：6 Pages	Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM Description: TheNTE2732Aisa32,768–bitsultravioleterasableandelectricallyprogrammableread–onlymemory(EPROM)organizedas4,096wordsby8bitsandmanufacturedusingN–ChannelSi–GateMOSprocessing.Withitssingle+5Vpowersupplyandwithanaccesstimeof200ns,theNTE2732Aisi	NTE NTE Electronics	NTE
NTE274	文件：25.78 Kbytes Page：2 Pages	Silicon Complementary Transistors Darlington Power Amplifier, Switch Description: TheNTE274(NPN)andNTE275(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO66typecasedesignedforgeneralpurposeamplifier,low–frequencyswitchingandhammerdriverapplications. Features: ?HighDCCurrentGain:hFE=3000Typ@IC=2A ?LowCollect	NTE NTE Electronics	NTE
NTE275	文件：25.78 Kbytes Page：2 Pages	Silicon Complementary Transistors Darlington Power Amplifier, Switch Description: TheNTE274(NPN)andNTE275(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO66typecasedesignedforgeneralpurposeamplifier,low–frequencyswitchingandhammerdriverapplications. Features: ?HighDCCurrentGain:hFE=3000Typ@IC=2A ?LowCollect	NTE NTE Electronics	NTE
NTE2764	文件：33.2 Kbytes Page：5 Pages	Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: TheNTE2764isa65,536–bit(8192X8bit)UltravioletErasableandElectricallyProgrammableRead–OnlyMemory(EPROM)ina28–LeadDIPtypepackagewhichoperatesfromasingle+5Vsupply,makingitidealformicroprocessorapplications.Itfeaturesanoutputenablecontrolandof	NTE NTE Electronics	NTE
NTE278	文件：23.1 Kbytes Page：2 Pages	Silicon NPN Transistor Broadband RF Amp Description: TheNTE278isasiliconNPNtransistorinaTO39typepackagedesignedspecificallyforbroadbandapplicationsrequiringgoodlinearity.Usableasahighfrequencycurrentmodeswitchto200mA. Features: ?LowNoiseFigure:NF=3.0dBTyp@f=200MHz ?HighCurrent–Gain	NTE NTE Electronics	NTE
NTE2708	文件：165.96 Kbytes Page：1 Pages	MICROPROCESSOR & MEMORY CIRCUITS	NTE NTE Electronics	NTE
NTE2716	文件：165.96 Kbytes Page：1 Pages	MICROPROCESSOR & MEMORY CIRCUITS	NTE NTE Electronics	NTE

替換型號(hào)

詳細(xì)參數(shù)

型號(hào)：
NTE27
制造商：
NTE Electronics
功能描述：
TRANSISTOR PNP GERMMANIUM 60V IC=60A TO-3 CASE FOR HIGH CURRENT HIGH GAIN APPLIC

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
現(xiàn)代芯城（深圳）科技有限公司	NTE27		24+	N/A	65000	一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇	詢價(jià)
深圳市博浩通科技有限公司	NTE2732A	NTE	23+	CDIP-24	1001	優(yōu)勢(shì)庫存	詢價(jià)
上海金慶電子技術(shù)有限公司	NTE2732A		新		119	全新原裝貨期兩周	詢價(jià)
上海市鑫鴻達(dá)電子	NTE2732A		2022+		115	全新原裝貨期兩周	詢價(jià)
萬三科技(深圳)有限公司	NTE27C64-15D	NTE	22+	NA	500000	萬三科技,秉承原裝,購(gòu)芯無憂	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	NTE272	NTE	23+		39310	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	NTE283	NTE	專業(yè)鐵帽	TO-3	67500	鐵帽原裝主營(yíng)-可開原型號(hào)增稅票	詢價(jià)
深圳市賽爾通科技有限公司	NTE284	NTE	23+		65480		詢價(jià)

更多NTE27供應(yīng)商更新時(shí)間2025-1-10 11:06:00

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