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NTE3060

0.3??Single Digit Numeric Display, Seven Segment, Common Cathode

Description: TheNTE3056throughNTE3060are0.3inch(7.62mm)heightsingledigit,sevensegment,commoncathodedisplays.TheNTE3056andNTE3057utilizeLEDchipswhicharemadefromGaAsPonaGaAssubstrate.TheNTE3059utilizesLEDchipswhicharemadefromGaPonatransparentGaPsubstrat

NTE

NTE Electronics

NTE3060

0.3 Single Digit Numeric Display, Seven Segment, Common Cathode

Description: TheNTE3056throughNTE3060are0.3inch(7.62mm)heightsingledigit,sevensegment,commoncathodedisplays.TheNTE3056andNTE3057utilizeLEDchipswhicharemadefromGaAsPonaGaAssubstrate.TheNTE3059utilizesLEDchipswhicharemadefromGaPonatransparentGaPsubstrat

NTE

NTE Electronics

NTE3061

0.3??Single Digit Numeric Display, Seven Segment, Common Anode

Description: TheNTE3061throughNTE3064are0.3inch(7.62mm)heightsingledigit,sevensegment,commonanodedisplays.TheNTE3061utilizesLEDchipswhicharemadefromGaAsPonaGaAssubstrate.TheNTE3063utilizesLEDchipswhicharemadefromGaPonatransparentGaPsubstrate.TheNTE306

NTE

NTE Electronics

NTE3064

0.3??Single Digit Numeric Display, Seven Segment, Common Anode

Description: TheNTE3061throughNTE3064are0.3inch(7.62mm)heightsingledigit,sevensegment,commonanodedisplays.TheNTE3061utilizesLEDchipswhicharemadefromGaAsPonaGaAssubstrate.TheNTE3063utilizesLEDchipswhicharemadefromGaPonatransparentGaPsubstrate.TheNTE306

NTE

NTE Electronics

NTE3068

0.4??Single Digit Numeric Display Seven Segment, RHDP

Description: TheNTE3068throughNTE3071are0.4inch(10.16mm)heightsingledigitdisplays.TheNTE3068andNTE3069devicesutilizeLEDchipswhicharemadefromGaPonatransparentGaPsubstrate.TheNTE3070andNTE3071devicesutilizechipswhicharemadefromGaAsPonatransparentGaPsubs

NTE

NTE Electronics

OTBE306KNPIR-F

DC/ACDualRatedCapacitorsProtected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications

Protected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications TypeOTBisacapacitorwitharobustconstructionconsistingofapaperoracombinationofpaperandfilmdielectricsystemwithfoilelectrodes,andisprotectedbyapressuresensitiveinterrupter.TheOTBisUL

CDE

Cornell Dubilier Electronics

OTBE306KNPIR-F

Protected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications

CDE

Cornell Dubilier Electronics

OTBE306KNPIR-F

DC/ACDualRatedCapacitors

CDE

Cornell Dubilier Electronics

OTBF306KNPIR-F

DC/ACDualRatedCapacitorsProtected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications

Protected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications TypeOTBisacapacitorwitharobustconstructionconsistingofapaperoracombinationofpaperandfilmdielectricsystemwithfoilelectrodes,andisprotectedbyapressuresensitiveinterrupter.TheOTBisUL

CDE

Cornell Dubilier Electronics

OTBF306KNPIR-F

Protected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications

CDE

Cornell Dubilier Electronics

OTBF306KNPIR-F

DC/ACDualRatedCapacitors

CDE

Cornell Dubilier Electronics

P-306-DB

300SeriesDeepBracket(DB)

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

P-306-DB

MultipleDensitySolderEyelet

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

PBPC306

3.0ABRIDGERECTIFIER

Features ?HighCurrentCapability ?SurgeOverloadRatingto50APeak ?HighCaseDielectricStrengthof1500V ?IdealforPrintedCircuitBoardApplication ?ULListedUnderRecognizedComponentIndex,FileNumberE94661

DIODES

Diodes Incorporated

PBSS306NX

100V,4.5ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS306PX. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabili

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS306NX

100V,4.5ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306NZ

100V,5.1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS306PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS306NZ

100V,5.1ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306NZ-Q

100V,5.1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS306PZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306PX

100V,3.7APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS306NX. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabili

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細參數(shù)

  • 型號:

    NTE306

  • 制造商:

    NTE Electronics

  • 功能描述:

    LED-DISPLAY-YELLOW

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
N/A
51000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
NTE
23+
39353
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
NTE
2011+
DIPSOP4
20000
原裝現(xiàn)貨
詢價
67
全新原裝 貨期兩周
詢價
2022+
63
全新原裝 貨期兩周
詢價
更多NTE306供應(yīng)商 更新時間2024-12-24 9:06:00