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NTE5870

Silicon Power Rectifier Diode, 12 Amp

Description: TheNTE5810,NTE5811,andNTE5870throughNTE5891arelowpowergeneralpurposerectifierdiodesinaDO4typepackagedesignedforbatterychargers,converters,powersupplies,andmachinetoolcontrols. Features: ?HighSurgeCurrentCapability ?HighVoltageAvailable

NTE

NTE Electronics

NTE5870

Silicon Power Rectifier Diode, 12 Amp, DO4

Description: TheNTE5810,NTE5811,andNTE5870throughNTE5891arelowpowergeneralpurposerectifierdiodesinaDO4typepackagedesignedforbatterychargers,converters,powersupplies,andmachinetoolcontrols. Features: ?HighSurgeCurrentCapability ?HighVoltageAvailable

NTE

NTE Electronics

NTE5870

Silicon Power Rectifier Diode, 12 Amp, DO4

Description: TheNTE5810,NTE5811,andNTE5870throughNTE5891arelowpowergeneralpurposerectifierdiodesinaDO4typepackagedesignedforbatterychargers,converters,powersupplies,andmachinetoolcontrols. Features: ?HighSurgeCurrentCapability ?HighVoltageAvailable

NTE

NTE Electronics

AN5870

WidebandwidthanalogswitchIC

■Overview TheAN5870KisawidebandwidthanalogswitchICof300MHzoperation.ItisusableforRGBsignalandhorizontal/verticalsynchronizingsignals,andithasabuilt-in75?driverforvideosignal.Inaddition,ithasalsorealizedahighspeedoperationbytheadoptionofCMOSprocess

PanasonicPanasonic Corporation

松下松下電器

AN5870K

WidebandwidthanalogswitchIC

■Overview TheAN5870KisawidebandwidthanalogswitchICof300MHzoperation.ItisusableforRGBsignalandhorizontal/verticalsynchronizingsignals,andithasabuilt-in75?driverforvideosignal.Inaddition,ithasalsorealizedahighspeedoperationbytheadoptionofCMOSprocess

PanasonicPanasonic Corporation

松下松下電器

BP5870

Worldwideinput,andbuiltinPFCACinput,andisolatedHigh-powerLEDDriverforIllumination

Worldwideinput,andbuiltinPFC ACinput,andisolatedHigh-powerLEDDriverforIllumination

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

CPH5870

N-ChannelSiliconMOSFET,SchottkyBarrierDiode,General-PurposeSwitchingDeviceApplications

MOSFET:N-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features ?CompositetypewithaN-channelsilliconMOSFETandaschottkybarrierdiodecontainedinonepackagefacilitatinghigh-densitymounting. ?[MOSFET] ?LowON-resistance ?Ultrahigh-speedswitching ?2.5Vdriv

SANYOSanyo

三洋三洋電機(jī)株式會社

S5870

Multi-elementphotodiodesforsurfacemounting

HAMAMATSUHamamatsu Photonics Co.,Ltd.

濱松光子濱松光子學(xué)株式會社

ST5870

PhotoTransistor

Features ?Lensedforhighsensitivity ?φ5mm(T-13/4)allplasticmoldtype ?Highreliabilityandstablecharacteristics ?Visiblelightcut-offtype ?Withbaseterminal

AUK

AUK corp

SZ5870

5.0WATT6.8-270VOLTSZENERDIODES

SSDI

Solid States Devices, Inc

UZ5870

POWERZENERS5WATT

POWERZENERS5WATT AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

DIGITRON

Digitron Semiconductors

UZ5870

POWERZENERS

DESCRIPTION Fused-in-glass,metallurgically-bonded5wattzeners. FEATURES ?2TimesGreaterSurgeRatingthanConventional10WattZeners ?SmallPhysicalSize

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

UZ5870

ElectricalSpecificationsat25oC

ZenerDiodes ElectricalSpecificationsat25°C

AMMSEMI

American Microsemiconductor

UZ5870

POWERZENERS

DESCRIPTION Fused-in-glass,metallurgically-bonded5wattzeners. FEATURES ?2TimesGreaterSurgeRatingthanConventional10WattZeners ?SmallPhysicalSize

MicrosemiMicrosemi Corporation

美高森美美高森美公司

詳細(xì)參數(shù)

  • 型號：

    NTE5870

  • 制造商：

    NTE Electronics

  • 功能描述：

    RECTIFIER 50V 12A DO-4 CATHODE CASE

  • 功能描述：

    Bulk

  • 功能描述：

    R-50 PRV- 12A CATH CASE

  • 功能描述：

    DIODE; Diode

  • Type：

    Standard Recovery; Diode

  • Configuration：

    Single; Repetitive Reverse Voltage Vrrm

  • Max：

    50V; Forward Current

  • If(AV)：

    12A; Forward Voltage VF

  • Max：

    1.26V; Forward Surge Current Ifsm

  • Max：

    280A; Diode Case

  • Style：

    DO-4 ;RoHS

  • Compliant：

    Yes

  • 功能描述：

    Diode 50V 12A 2-Pin DO-4

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更多NTE5870供應(yīng)商 更新時(shí)間2024-11-16 16:06:00

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