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SI3443CDV

P-Channel20V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI3443DDV

P-Channel20V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI3443DV

UltraLowOn-Resistance

IRF

International Rectifier

SI3443DV

P-Channel2.5-V(G-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI3443DV

HEXFETPowerMOSFET

Description TheseP-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ●U

IRF

International Rectifier

SI3443DV

P-Channel2.5VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETisproducedusingFairchildsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainlowgatecharageforsuperiorswitchingperformance. Features ?–4A,–20V.RDS(ON)=0.065?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SI3443DVPBF

HEXFETPowerMOSFET

InterFET

InterFET Corporation

SI3443DVPBF

UltraLowOn-Resistance

IRF

International Rectifier

SI3443DVTR

UltraLowOn-Resistance

IRF

International Rectifier

SI3443DVTRPBF

UltraLowOn-Resistance

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號:

    NTGS3443T

  • 功能描述:

    MOSFET PFET 20V 0.10R TR

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
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更多NTGS3443T供應(yīng)商 更新時間2025-3-12 17:10:00