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NTHL017N60S5H

MOSFET - Power, Single N-Channel, SUPERFET, FAST, TO247 600 V, 17 m, 75 A

Description TheSUPERFETVMOSFETFASTserieshelpsmaximizesystem efficiencybytheextremelylowswitchinglossesinhardswitching application. Features ?650V@TJ=150°C/Typ.RDS(on)=14.3m ?100AvalancheTested ?Pb?Free,HalogenFree/BFRFreeandRoHSCompliant Applic

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL017N60S5H

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(TYP)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·ServerPowerSupplies ·IndustrialPowerSupplies

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTHL020N090SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L

Features ?Typ.RDS(on)=20m@VGS=15V ?Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(QG(tot)=196nC) ?LowEffectiveOutputCapacitance(Coss=296pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelint

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL020N090SC1_V01

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L

Features ?Typ.RDS(on)=20m@VGS=15V ?Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(QG(tot)=196nC) ?LowEffectiveOutputCapacitance(Coss=296pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelint

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL020N120SC1

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boos

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL020N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boost

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL020N120SC1_V01

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boos

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL020N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boost

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL022N120M3S

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3, TO-247-3L

Features ?Typ.RDS(on)=22m@VGS=18V ?UltraLowGateCharge(QG(tot)=139nC) ?LowEffectiveOutputCapacitance(Coss=141pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb-Free2LI(onsecondlevelinterconnection) TypicalApplic

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL023N065M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-3L

Features ?TypicalRDS(on)=23m@VGS=18V ?UltraLowGateCharge(QG(tot)=69nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=153pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb?Free2LI(onsecondlevelinterconnection) Appli

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NTH

  • 功能描述：

    烙鐵 Weller Chisel Tip For WMP Solder Penc

  • RoHS：

    否

  • 制造商：

    Weller

  • 產(chǎn)品：

    Soldering Stations

  • 類型：

    Digital, Iron, Stand, Cleaner

  • 瓦特：

    50 W

  • 最大溫度：

    + 850 F

  • 電纜類型：

    US Cord Included

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ApexToolGroup/CooperTool
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