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NTLJD4150PTBG

Power MOSFET -30 V, -3.4 A, uCool TM Dual P-Channel,2x2 mm WDFN Package

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PDS4150

4AHIGHVOLTAGESCHOTTKYBARRIERRECTIFIER

DescriptionandApplications ThisSchottkyBarrierRectifierhasbeendesignedtomeetthestringentrequirementsofAutomotiveApplications.Itisideallysuitedtouseas: ?PolarityProtectionDiode ?Re-circulatingDiode ?SwitchingDiode FeaturesandBenefits ?GuardRingDieConstructi

DIODES

Diodes Incorporated

PDS4150

4AHIGHVOLTAGESCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

PDS4150

4AHIGHVOLTAGESCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

PE4150

UltraCMOSLowFrequencyPassiveMixerwithIntegratedLOAmplifier

PSEMI

pSemi Corporation

PE4150

TNCFEMALEBULKHEADSOLDER/CLAMPATTACHMENTFORRG402PE-SR402AL&PE-SR402FL

TNCFEMALEBULKHEADSOLDER/CLAMPATTACHMENTFORRG402PE-SR402AL&PE-SR402FL

PASTERNACK

Pasternack Enterprises, Inc.

PE4150

UltraCMOSLowFrequencyPassiveMixerwithIntegratedLOAmplifier

ProductDescription ThePE4150isanultra-highlinearityQuadMOSFETmixerwithanintegratedLOamplifier.TheLOamplifierallowsforLOdrivelevelsoflessthan0dBmtoproduceIIP3valuessimilartoaQuadMOSFETArraydrivenwitha15dBmLOdrive.ThePE4150operateswithdifferentialsi

Peregrine

Peregrine Semiconductor Corp.

PE4150

UltraCMOS

Peregrine

Peregrine Semiconductor Corp.

PMLL4150

High-speeddiodes

DESCRIPTION ThePMLL4150,PMLL4151,PMLL4153arehigh-speedswitchingdiodesfabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSMDpackages. FEATURES ?SmallhermeticallysealedglassSMDpackage ?Highswitchingspeed:max.4ns ?Generalapplication

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PPC-4150W-RAE

15.6FanlessWideScreenPanelPCwithIntelAtomDual-CoreProcessor

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技(中國)有限公司

PVX-4150

?1,500VPULSEGENERATOR

IXYS

IXYS Corporation

PVX-4150

?1,500VPULSEGENERATOR

±1,500VPULSEGENERATOR ThePVX-4150pulsegeneratorproducesfast,highvoltagewaveformsto1,500V.Optimizedforhighimpedancecapacitiveloads,thePVX-4150iswellsuitedfordrivingextractiongridsanddeflectionplatesforelectrostaticmodulationofparticlebeamsintime-of-flightmas

DEI

Directed Energy, Inc

R4150F

RingTongueTerminal10-12AWGCopperYellow27.69mmTin

HOLLINGSWORTH

Hollingsworth

R4150SF

RingTongueTerminal10-12AWGCopperYellow27.69mmTin

HOLLINGSWORTH

Hollingsworth

RLS4150

Switchingdiode

Features 1)Smallsurfacemountingtype.(LLDS) 2)Highspeed. 3)Forsurfacemounting. 4)Highreliability. Applications High-speedswitching

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RLS4150

Switchingdiode

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

SC4150

NegativeVoltageHotSwapController

Description TheSC4150isanegativevoltagehotswapcontrollerthatallowstheinsertionoflinecardsintoalivebackplane. Features ◆Programmableslewoftheinrushcurrentwhenusedforhotinsertioninthenegative24Vand48Vbackplane ◆Closedloopoperationlimitsthemaximumcurrent

SEMTECH

Semtech Corporation

SC4150HISTRT

NegativeVoltageHotSwapController

Description TheSC4150isanegativevoltagehotswapcontrollerthatallowstheinsertionoflinecardsintoalivebackplane. Features ◆Programmableslewoftheinrushcurrentwhenusedforhotinsertioninthenegative24Vand48Vbackplane ◆Closedloopoperationlimitsthemaximumcurrent

SEMTECH

Semtech Corporation

SC4150LISTRT

NegativeVoltageHotSwapController

Description TheSC4150isanegativevoltagehotswapcontrollerthatallowstheinsertionoflinecardsintoalivebackplane. Features ◆Programmableslewoftheinrushcurrentwhenusedforhotinsertioninthenegative24Vand48Vbackplane ◆Closedloopoperationlimitsthemaximumcurrent

SEMTECH

Semtech Corporation

SD4150

SURFACEMOUNT1N4150DIODE

RECTRON

Rectron Semiconductor

詳細(xì)參數(shù)

  • 型號:

    NTLJD4150PTBG

  • 功能描述:

    MOSFET P-CH DUAL 30V 3.2A 6WDFN

  • RoHS:

  • 類別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列

  • 系列:

    -

  • 產(chǎn)品目錄繪圖:

    8-SOIC Mosfet Package

  • 標(biāo)準(zhǔn)包裝:

    1

  • 系列:

    - FET

  • 型:

    2 個(gè) N 溝道(雙) FET

  • 特點(diǎn):

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    60V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    3A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    75 毫歐 @ 4.6A,10V Id 時(shí)的

  • Vgs(th)(最大):

    3V @ 250µA 閘電荷(Qg) @

  • Vgs:

    20nC @ 10V 輸入電容(Ciss) @

  • Vds:

    - 功率 -

  • 最大:

    1.4W

  • 安裝類型:

    表面貼裝

  • 封裝/外殼:

    PowerPAK? SO-8

  • 供應(yīng)商設(shè)備封裝:

    PowerPAK? SO-8

  • 包裝:

    Digi-Reel®

  • 產(chǎn)品目錄頁面:

    1664(CN2011-ZH PDF)

  • 其它名稱:

    SI7948DP-T1-GE3DKR

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ONSEMI/安森美
23+
WDFN-6
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低
詢價(jià)
ONSEMICON
23+
NA
1308
專做原裝正品,假一罰百!
詢價(jià)
ON/安森美
21+
6-WDFN
19000
只做正品原裝現(xiàn)貨
詢價(jià)
ONN
1535+
922
詢價(jià)
ON Semiconductor
22+
6WDFN
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
ON Semiconductor
21+
6WDFN
13880
公司只售原裝,支持實(shí)單
詢價(jià)
ON Semiconductor
23+
6WDFN
9000
原裝正品,支持實(shí)單
詢價(jià)
ON Semiconductor
2022+
6-WDFN(2x2)
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價(jià)
ON
22+
6DFN
3000
原裝現(xiàn)貨
詢價(jià)
ON/安森美
22+
6-WDFN
25000
只有原裝絕對原裝,支持BOM配單!
詢價(jià)
更多NTLJD4150PTBG供應(yīng)商 更新時(shí)間2025-1-9 10:33:00