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NTMD3N08LR2

Power MOSFET 2.3 Amps, 80 Volts

PowerMOSFET2.3Amps,80Volts N?ChannelEnhancement?ModeSO?8DualPackage Features ?UltraLowOn?ResistanceProvidesHigherEfficiency ?RDS(on)=0.215Ω,VGS=10V ?RDS(on)=0.245Ω,VGS=5.0V ?LowReverseRecoveryLosses ?InternalRG=50Ω ?DesignedforPowerManagement

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

CDA3N08-G

SteeringDiodeArrays-ESDSuppressors

Features ?(16kV)IEC61000-4-2capable ?FastReverseRecoveryTime ?FastTurnonTime ?LowCapacitance ?SMDPackages Applications ?SignalTermination ?SignalConditioning ?ESDSuppression ?TransientSuppression

COMCHIPComchip Technology

典琦典琦科技股份有限公司

DN3N08TTE

diodeterminatornetwork

KOA

KOA SPEER ELECTRONICS, INC.

DN3N08TTE

diodeterminatornetwork

KOA

KOA SPEER ELECTRONICS, INC.

DN3N08TTEB

diodeterminatornetwork

KOA

KOA SPEER ELECTRONICS, INC.

DN3N08TTEB

diodeterminatornetwork

KOA

KOA SPEER ELECTRONICS, INC.

MTD3N08LD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,po

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTD3N08LI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,po

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP3N08L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

RFD3N08

3A,80V,0.800Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFD3N08LandRFD3N08LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

Intersil

Intersil Corporation

RFD3N08L

3A,80V,0.800Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFD3N08LandRFD3N08LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

Intersil

Intersil Corporation

RFD3N08LSM

3A,80V,0.800Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFD3N08LandRFD3N08LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    NTMD3N08L

  • 功能描述：

    MOSFET 80V 2.3A N-Channel

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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更多NTMD3N08L供應(yīng)商 更新時(shí)間2024-12-23 10:31:00

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