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NTP60N06LG

Power MOSFET 60 Amps, 60 Volts, Logic Level N??hannel TO??20 and D2PAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVB60N06

MOSFET–Power,N-Channel,D2PAK60V,60A

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features ?AEC?Q101QualifiedandPPAPCapable?NVB60N06 ?TheseDevicesarePb?FreeandareRoHSCompliant TypicalApplications ?PowerSupplies ?C

ONSEMION Semiconductor

安森美半導體安森美半導體公司

OM60N06SA

LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr

IRF

International Rectifier

P60N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

PHB60N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHB60N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP60N06LTissu

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB60N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB60N06T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHP60N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHP60N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP60N06LTissu

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細參數(shù)

  • 型號：

    NTP60N06LG

  • 功能描述：

    MOSFET 60V 60A N-Channel

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
ON/安森美
17+
TO-2203LEADSTANDARD
31518
原裝正品 可含稅交易
 詢價
ON
24+
TO-2203LEADSTANDA
8866
詢價
ON
1735+
TO220
6528
科恒偉業(yè)!只做原裝正品!假一賠十!
 詢價
ON
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
ONS
6000
面議
19
DIP/SMD
 詢價
ON
20+
TO-2203LEADSTANDA
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
ON
2020+
TO220
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
ON
24+
TO-220
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
ON/安森美
23+
TO-2203LEADSTANDA
32500
公司只做原裝正品
 詢價
ON/安森美
23+
TO-2203LEADSTANDA
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多NTP60N06LG供應商 更新時間2025-2-3 14:03:00

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