NV24C08MUW3VLTBG集成電路（IC）的存儲器規(guī)格書PDF中文資料

NV24C08MUW3VLTBG屬于集成電路（IC）的存儲器。由安森美半導體公司制造生產(chǎn)的NV24C08MUW3VLTBG存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The NV24C08LV are 8?Kb CMOS Serial EEPROM devices that

operate at a minimum 1.7 V supply voltage. They are organized

internally as 64 pages of 16 bytes each. All devices support the

Standard (100 kHz), Fast (400 kHz) and Fast?Plus (1 MHz) I2C

protocol.

Data is written by providing a starting address, then loading 1 to 16

contiguous bytes into a Page Write Buffer, and then writing all data to

non?volatile memory in one internal write cycle. Data is read by

providing a starting address and then shifting out data serially while

automatically incrementing the internal address count.

External address pins make it possible to address up to two

NV24C08 device on the same bus.

Features

? Automotive AEC?Q100 Grade 1 (?40°C to +125°C) Qualified

? Supports Standard, Fast and Fast?Plus I2C Protocol

? 1.7 V to 5.5 V Supply Voltage Range

? 16?Byte Page Write Buffer

? Fast Write Time (4 ms max)

? Hardware Write Protection for Entire Memory

? Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs

(SCL and SDA)

? Low power CMOS Technology

? More than 1,000,000 Program/Erase Cycles

? 100 Year Data Retention

? Automotive Grade 1 Temperature Range

? SOIC, TSSOP, US 8?Lead, TSOP?5 Lead and Wettable Flank UDFN

8?pad Packages

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

Compliant