NV25512MUW3VTBG集成電路（IC）的存儲器規(guī)格書PDF中文資料

NV25512MUW3VTBG屬于集成電路（IC）的存儲器。由安森美半導(dǎo)體公司制造生產(chǎn)的NV25512MUW3VTBG存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The NV25512 is a EEPROM Serial 512?Kb SPI Automotive

Grade 1 device internally organized as 64Kx8 bits. This features a

128?byte page write buffer and supports the Serial Peripheral

Interface (SPI) protocol. The device is enabled through a Chip Select

CS) input. In addition, the required bus signals are clock input (SCK),

data input (SI) and data output (SO) lines. The HOLD input may be

used to pause any serial communication with the NV25512 device.

The device features software and hardware write protection, including

partial as well as full array protection.

On?Chip ECC (Error Correction Code) makes the device suitable

for high reliability applications.

Features

? Automotive AEC?Q100 Grade 1 (?40°C to +125°C) Qualified

? 10 MHz SPI Compatible

? 1.8 V to 5.5 V Supply Voltage Range

? SPI Modes (0,0) & (1,1)

? 128?byte Page Write Buffer

? Additional Identification Page with Permanent Write Protection

? Self?timed Write Cycle

? Hardware and Software Protection

? Block Write Protection

? Protect 1/4, 1/2 or Entire EEPROM Array

? Low Power CMOS Technology

? 1,000,000 Program/Erase Cycles

? 100 Year Data Retention

? Wettable Flank UDFN 8?pad Package

? This Device is Pb?Free, Halogen Free/BFR Free, and RoHS

Compliant