首頁 >NVHL045N065SC1>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NVHL045N065SC1 | Silicon Carbide (SiC) MOSFET – 32 mohm, 650 V, M2, TO-247-3L Features ?Typ.RDS(on)=32m@VGS=18V Typ.RDS(on)=42m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=162pF) ?100%AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSComplia | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
SiliconCarbide(SiC)MOSFET–EliteSiC,31mohm,650V,M2,D2PAK-7L Features ?Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=168pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(o | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–31mohm,650V,M2,D2PAK-7L Features ?Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=168pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(o | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L650V,31m,62A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET-33mohm,650V,M2,TOLL Features ?Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=162pF) ?100AvalancheTested ?TJ=175°C ?RoHSCompliant TypicalApplications ?SMPS(SwitchingModePowerSupplies) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbideSiCMOSFET-32mohm,650V,M2,TO-247-3L Features ?Typ.RDS(on)=32m@VGS=18V Typ.RDS(on)=42m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=162pF) ?100AvalancheTested ?TJ | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET-33mohm,650V,M2,Power88 Features ?Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=162pF) ?100AvalancheTested ?TJ=175°C ?RoHSCompliant TypicalApplications ?SMPS(SwitchingModePowerSupplies) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET-33mohm,650V,M2,Power88 Features ?Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=162pF) ?100AvalancheTested ?TJ=175?C ?RoHSCompliant TypicalApplications ?SMPS(SwitchingModePowerSupplies) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbideSiCMOSFET-31mohm,650V,M2,D2PAK-71 Features ?Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=168pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexem | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
TO-247-3LD |
100000 |
全新原裝 |
詢價 | ||
onsemi(安森美) |
23+ |
TO247 |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | ||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢價 | ||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢價 | ||
ON(安森美) |
23+ |
NA/ |
8735 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
Onsemi |
22 |
6000 |
全新、原裝 |
詢價 | |||
24+ |
N/A |
69000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
ON SEMICONDUCTOR |
23+ |
NA |
62 |
MOSFET |
詢價 | ||
onsemi |
23+ |
TO-247-3 |
1356 |
原廠正品現(xiàn)貨SiC MOSFET全系列 |
詢價 | ||
ON(安森美) |
23+ |
13157 |
公司只做原裝正品,假一賠十 |
詢價 |
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