NVT4857UKZ集成電路（IC）的專用規(guī)格書PDF中文資料

1 General description

The device is an SD 3.0-compliant bidirectional dual voltage level translator with auto-direction control. It is designed to interface between a memory card operating at 1.8 V or 3.0 V signal levels and a host with a nominal supply voltage of 1.2 V to 1.8 V. The device supports SD 3.0 SDR104, SDR50, DDR50, SDR25, SDR12 and SD 2.0 High-Speed (50 MHz) and Default-Speed (25 MHz) modes. The device has an integrated voltage selectable low dropout regulator to supply the card-side I/Os, an auto-enable/ disable function connected to the VSD supply pin, built-in EMI filters and robust ESD protections (IEC 61000-4-2, level 4).

2 Features and benefits

? Supports up to 208 MHz clock rate

? SD 3.0 specification-compliant voltage translation to support SDR104, SDR50, DDR50, SDR25, SDR12,

High-Speed and Default-Speed modes

? 1.2 V to 1.8 V host side interface voltage support

? Feedback channel for clock synchronization

? 100 mA Low dropout voltage regulator to supply the card-side I/Os

? Low power consumption by push-pull output stage with break-before-make architecture

? Automatic enable and disable through VSD

? Integrated pull-up and pull-down resistors: no external resistors required

? Integrated EMI filters suppress higher harmonics of digital I/Os

? Integrated 8 kV ESD protection according to IEC 61000-4-2, level 4 on card side

? Level shifting buffers keep ESD stress away from the host (zero-clamping concept)

? 20-ball WLCSP; pitch 0.4 mm

3 Applications

? Smart phones

? Mobiles handsets

? Digital cameras

? Tablet PCs

? Laptop computers

? SD, MMC or microSD card readers