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NVVR26A120M1WSS中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

NVVR26A120M1WSS
廠商型號(hào)

NVVR26A120M1WSS

功能描述

Automotive 1200 V, 2.6 m N-Channel MOSFET, 400 A Half-Bridge Power Module VE-Trac B2 SiC Module

文件大小

347.05 Kbytes

頁面數(shù)量

11

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-10 17:30:00

NVVR26A120M1WSS規(guī)格書詳情

Product Description

The NVVR26A120M1WSS is part of the VE?TRAC B2 SiC

family of highly integrated power modules for Hybrid (HEV) and

Electric Vehicle (EV) traction inverter application. The module

integrates 1200 V SiC MOSFET in a half?bridge configuration. To

enhance reliability and thermal performance, sintering technology is

applied for die attach. The module is designed to meet the AQG324

standard.

Features

? Ultra Low RDS(on)

? Aluminum Nitride Isolator

? Ultra?low Stray Inductance ~ 7.1 nH

? Tvj.Max = 175°C for Continuous Operation

? Automotive Grade SiC MOSFET Chip Technologies

? Sintered Die Technology for High Reliability Performance

? Automotive Module AQG324 Compliant

? PPAP Capable

Applications

? Automotive EV/HEV? Traction Inverter

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